- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRT60045RL | DIODE SCHOTTKY 45V 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 45V | 600mV @ 300A | 45V | -55°C ~ 150°C | 1 Pair Common Anode | 300A | ||||||||
| GD10MPS12A | 1200V 10A TO-220-2 SIC SCHOTTKY | GeneSiC Semiconductor | TO-220-2 | 25A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 5µA @ 1200V | 367pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ | ||||||
| MSRTA500100(A) | DIODE MODULE 1KV 500A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 500A | 1000V | -55°C ~ 150°C | 1 Pair Common Cathode | 500A (DC) | ||||||||
| MBR50045CTR | DIODE MODULE 45V 250A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky, Reverse Polarity | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 250A | 45V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | ||||||||
| MBRTA80020RL | DIODE SCHOTTKY 20V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 580mV @ 400A | 20V | -55°C ~ 150°C | 1 Pair Common Anode | 400A | ||||||||
| MBRF30035 | DIODE SCHOTTKY 35V 150A TO244AB | GeneSiC Semiconductor | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 35V | 700mV @ 150A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | ||||||||
| MSRT250100(A) | DIODE MODULE 1KV 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 15µA @ 600V | 1.2V @ 250A | 1000V | -55°C ~ 150°C | 1 Pair Common Cathode | 250A (DC) | ||||||||
| GKR71/04 | DIODE GEN PURP 400V 95A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 95A | Standard | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 400V | 1.5V @ 60A | 400V | -40°C ~ 180°C | |||||||||
| 1N4588R | DIODE GEN PURP 200V 150A DO205AA | GeneSiC Semiconductor | DO-205AA, DO-8, Stud | 150A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-205AA (DO-8) | Standard Recovery >500ns, > 200mA (Io) | 9.5mA @ 200V | 1.5V @ 150A | 200V | -60°C ~ 200°C | |||||||||
| MURH10060R | DIODE GEN PURP 600V 100A D-67 | GeneSiC Semiconductor | D-67 | 100A | Standard, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 600V | 1.7V @ 100A | 600V | 110ns | |||||||||
| MBRF40040R | DIODE SCHOTTKY 40V 200A TO244AB | GeneSiC Semiconductor | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 40V | 700mV @ 200A | 40V | -55°C ~ 150°C | 1 Pair Common Anode | 200A | ||||||||
| MURF40010R | DIODE GEN PURP 100V 200A TO244 | GeneSiC Semiconductor | TO-244AB | Standard | Chassis Mount | TO-244 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 100V | 1V @ 200A | 100V | 150ns | -55°C ~ 150°C | 1 Pair Common Anode | 200A | |||||||
| S16J | DIODE GEN PURP 600V 16A DO203AA | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 16A | Standard | Chassis, Stud Mount | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 50V | 1.1V @ 16A | 600V | -65°C ~ 175°C | ||||||||||
| FR30G02 | DIODE GEN PURP 400V 30A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 30A | Standard | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1V @ 30A | 400V | 200ns | -40°C ~ 125°C | ||||||||
| GE2X8MPS06D | 650V 16A TO-247-3 SIC SCHOTTKY M | GeneSiC Semiconductor | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247-3 | No Recovery Time > 500mA (Io) | 650V | -55°C ~ 175°C | 1 Pair Common Cathode | 19A (DC) | SiC Schottky MPS™ |
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