• Manufacturer
  • Diode Type
  • Supplier Device Package
Found: 167143
Partnumber Description Manufacturer
Package / Case
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Diode Type
Mounting Type
Tolerance
Supplier Device Package
Configuration
Technology
Operating Temperature
Speed
Power - Max
Voltage - Zener (Nom) (Vz)
Impedance (Max) (Zzt)
Current - Reverse Leakage @ Vr
Current - Max
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Power Dissipation (Max)
Resistance @ If, F
Capacitance Ratio
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Capacitance Ratio Condition
Q @ Vr, F
Current - Average Rectified (Io) (per Diode)
Series
CZRER18VB-HF DIODE ZENER 18V 150MW 0503 Comchip Technology 0503 (1308 Metric) Surface Mount ±2% 0503/SOD-723F -55°C ~ 125°C 150mW 18V 42 Ohms 100nA @ 14V 900mV @ 10mA
G3S06502H SIC SCHOTTKY DIODE 650V 2A 2-PIN Global Power Technology Co. Ltd TO-220-2 Full Pack 9A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 123pF @ 0V, 1MHz 1.7V @ 2A 650V 0ns -55°C ~ 175°C
1N5919CP/TR8 DIODE ZENER 5.6V 1.5W DO204AL Microchip Technology DO-204AL, DO-41, Axial Through Hole ±2% DO-204AL (DO-41) -65°C ~ 150°C 1.5W 5.6V 2 Ohms 5µA @ 3V 1.2V @ 200mA
1N964BUR-1/TR VOLTAGE REGULATOR Microchip Technology
CD4717 VOLTAGE REGULATOR Microchip Technology Die Surface Mount ±5% Die -65°C ~ 175°C 500mW 43V 10nA @ 32.6V 1.5V @ 200mA
CDLL5518A/TR VOLTAGE REGULATOR Microchip Technology DO-213AB, MELF Surface Mount ±10% DO-213AB -65°C ~ 175°C 500mW 3.3V 26 Ohms 5µA @ 900mV 1.1V @ 200mA
1N4712 (DO35) DIODE ZENER 28V 500MW DO35 Microsemi Corporation DO-204AH, DO-35, Axial Through Hole ±5% DO-35 -65°C ~ 175°C 500mW 28V 10nA @ 21.2V 1.1V @ 200mA
1N5368CE3/TR13 DIODE ZENER 47V 5W T18 Microsemi Corporation T-18, Axial Through Hole ±2% T-18 -65°C ~ 150°C 5W 47V 25 Ohms 500nA @ 33.8V 1.2V @ 1A
PMEG4010ETR,115 DIODE SCHOTTKY 40V 1A SOD123W Nexperia USA Inc. SOD-123W 1A Schottky Surface Mount SOD-123W Fast Recovery =< 500ns, > 200mA (Io) 50µA @ 40V 130pF @ 1V, 1MHz 490mV @ 1A 40V 4.4ns 175°C (Max)
1N5362B ZD 28V 5W NTE Electronics, Inc T-18, Axial Through Hole ±5% Axial -65°C ~ 200°C 5W 28V 6 Ohms 500nA @ 21.2V 1.2V @ 1A
NTE552-10 10PACK OF NTE552 NTE Electronics, Inc
FFSPF0865A 650V 8A SIC SBD onsemi TO-220-2 Full Pack 8A (DC) Silicon Carbide Schottky Through Hole TO-220F-2FS No Recovery Time > 500mA (Io) 200µA @ 650V 463pF @ 1V, 100kHz 1.75V @ 8A 650V 0ns -55°C ~ 175°C
BZX84B10VLYT116 250MW, 10V, SOT-23, ZENER DIODE Rohm Semiconductor TO-236-3, SC-59, SOT-23-3 Surface Mount ±2% SOT-23 150°C (TJ) 250mW 10V 20 Ohms 200nA @ 7V
RS2GA R3G DIODE GEN PURP 400V 1.5A DO214AC Taiwan Semiconductor Corporation DO-214AC, SMA 1.5A Standard Surface Mount DO-214AC (SMA) Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 400V 50pF @ 4V, 1MHz 1.3V @ 1.5A 400V 150ns -55°C ~ 150°C
ES1CHE3/61T DIODE GEN PURP 150V 1A DO214AC Vishay General Semiconductor - Diodes Division DO-214AC, SMA 1A Standard Surface Mount DO-214AC (SMA) Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 150V 10pF @ 4V, 1MHz 920mV @ 1A 150V 25ns -55°C ~ 150°C Automotive, AEC-Q101