Semiconductors, Diodes Global Power Technology-GPT

Diodes - RF 0
Diodes - Rectifiers - Arrays 184
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 184

G3S06530P

SIC SCHOTTKY DIODE 650V 30A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 95A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 2150pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S12015A

SIC SCHOTTKY DIODE 1200V 15A 2-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 57A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 1700pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G51XT

SIC SCHOTTKY DIODE 650V 1A SOD12

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 1.84A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S06505H

SIC SCHOTTKY DIODE 650V 5A 2-PIN

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 15.4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 424pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G4S06510HT

SIC SCHOTTKY DIODE 650V 10A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S06510QT

SIC SCHOTTKY DIODE 650V 10A DFN8

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: 4-DFN (8x8)
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 53A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 645pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S12010C

SIC SCHOTTKY DIODE 1200V 10A 2-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 34.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 825pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G4S06515AT

SIC SCHOTTKY DIODE 650V 15A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 36A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 645pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S12010A

SIC SCHOTTKY DIODE 1200V 10A 2-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 34.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 770pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S06520H

SIC SCHOTTKY DIODE 650V 20A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 26A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 1170pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S12003H

SIC SCHOTTKY DIODE 1200V 3A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: 260pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S06510P

SIC SCHOTTKY DIODE 650V 10A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 32.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 690pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G4S06540PT

SIC SCHOTTKY DIODE 650V 40A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 81.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 1860pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S12020B

SIC SCHOTTKY DIODE 1200V 20A 3-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 33A (DC)
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G5S12002C

SIC SCHOTTKY DIODE 1200V 2A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 8.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 170pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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