- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
G4S12020BM | SIC SCHOTTKY DIODE 1200V 20A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 30µA @ 1200V | 1.6V @ 10A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 33.2A (DC) | ||
G3S06506C | SIC SCHOTTKY DIODE 650V 6A 2-PIN | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 22.5A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 424pF @ 0V, 1MHz | 1.7V @ 6A | 650V | 0ns | -55°C ~ 175°C | ||
G4S06510PT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology-GPT | TO-247-2 | 31.2A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
GAS06520A | SIC SCHOTTKY DIODE 650V 20A 2-PI | Global Power Technology-GPT | TO-220-2 | 66A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1390pF @ 0V, 1MHz | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C | ||
G3S17005C | SIC SCHOTTKY DIODE 1700V 5A 2-PI | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 27A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 1700V | 780pF @ 0V, 1MHz | 1.7V @ 5A | 1700V | 0ns | -55°C ~ 175°C | ||
G5S12010A | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology-GPT | TO-220-2 | 37A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1200V | 0ns | -55°C ~ 175°C | ||||
G5S06505DT | SIC SCHOTTKY DIODE 650V 5A 2-PIN | Global Power Technology-GPT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 24A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.5V @ 5A | 650V | 0ns | -55°C ~ 175°C | ||
G5S06508QT | SIC SCHOTTKY DIODE 650V 8A DFN8* | Global Power Technology-GPT | 4-PowerTSFN | 44.9A (DC) | Silicon Carbide Schottky | Surface Mount | 4-DFN (8x8) | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.5V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
G3S06508J | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology-GPT | TO-220-2 Isolated Tab | 23A (DC) | Silicon Carbide Schottky | Through Hole | TO-220ISO | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
G3S06502H | SIC SCHOTTKY DIODE 650V 2A 2-PIN | Global Power Technology-GPT | TO-220-2 Full Pack | 9A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 650V | 123pF @ 0V, 1MHz | 1.7V @ 2A | 650V | 0ns | -55°C ~ 175°C | ||
G3S12005H | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology-GPT | TO-220-2 Full Pack | 21A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 475pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C | ||
G3S06520A | SIC SCHOTTKY DIODE 650V 20A 2-PI | Global Power Technology-GPT | TO-220-2 | 56.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1170pF @ 0V, 1MHz | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C | ||
G3S12004B | SIC SCHOTTKY DIODE 1200V 4A 3-PI | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 8.5A (DC) | ||
G4S06515CT | SIC SCHOTTKY DIODE 650V 15A 2-PI | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 35.8A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.7V @ 15A | 650V | 0ns | -55°C ~ 175°C | ||
G3S17010A | SIC SCHOTTKY DIODE 1700V 10A 2-P | Global Power Technology-GPT | TO-220-2 | 24A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 100µA @ 1700V | 1500pF @ 0V, 1MHz | 1.7V @ 10A | 1700V | 0ns | -55°C ~ 175°C |
- 10
- 15
- 50
- 100