Semiconductors, Diodes IXYS-RF

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 6
  • SS150TI60110
    DIODE ARRAY SCHOTTKY 600V DE150
    IXYS-RF
    • Manufacturer: IXYS-RF
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD, Flat Lead Exposed Pad
    • Supplier Device Package: DE150
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 3 Independent
    • Current - Average Rectified (Io) (per Diode): 10A
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  • SS150TC60110
    DIODE ARRAY SCHOTTKY 600V DE150
    IXYS-RF
    • Manufacturer: IXYS-RF
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD, Flat Lead Exposed Pad
    • Supplier Device Package: DE150
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 3 Common Cathode
    • Current - Average Rectified (Io) (per Diode): 10A
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  • SS150TA60110
    DIODE ARRAY SCHOTTKY 600V DE150
    IXYS-RF
    • Manufacturer: IXYS-RF
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD, Flat Lead Exposed Pad
    • Supplier Device Package: DE150
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 3 Common Anode
    • Current - Average Rectified (Io) (per Diode): 10A
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  • SS275TA12205
    DIODE ARRAY SCHOTTKY 1200V DE275
    IXYS-RF
    • Manufacturer: IXYS-RF
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD, Flat Lead Exposed Pad
    • Supplier Device Package: DE275
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 3 Common Anode
    • Current - Average Rectified (Io) (per Diode): 5A
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  • SS275TC12205
    DIODE ARRAY SCHOTTKY 1200V DE275
    IXYS-RF
    • Manufacturer: IXYS-RF
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD, Flat Lead Exposed Pad
    • Supplier Device Package: DE275
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 3 Common Cathode
    • Current - Average Rectified (Io) (per Diode): 5A
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  • SS275TI12205
    DIODE ARRAY SCHOTTKY 1200V DE275
    IXYS-RF
    • Manufacturer: IXYS-RF
    • Mounting Type: Surface Mount
    • Package / Case: 6-SMD, Flat Lead Exposed Pad
    • Supplier Device Package: DE275
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 3 Independent
    • Current - Average Rectified (Io) (per Diode): 5A
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  • 10
  • 15
  • 50
  • 100