• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 46889
  • FDWS9508L-F085
    PMOS PWR56 40V 4.9 MOHM
    onsemi
    • Manufacturer: onsemi
    • Series: Automotive, AEC-Q101, PowerTrench®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 214W (Tj)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • STW69N65M5
    MOSFET N-CH 650V 58A TO-247
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: MDmesh™ V
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 330W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±25V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APT56M60B2
    MOSFET N-CH 600V 56A T-MAX
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: POWER MOS 8™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Supplier Device Package: TO-247 [B]
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1040W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • AOTF4126
    MOSFET N-CH 100V 6A TO220F
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: SDMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220-3F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
    • Vgs (Max): ±25V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • PMV170UN,215
    MOSFET N-CH 20V 1A TO-236AB
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236AB (SOT23)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
    • Rds On (Max) @ Id, Vgs: 165mOhm @ 1A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 325mW (Ta), 1.14W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • FDC697P_F077
    MOSFET P-CH 20V 8A SSOT-6
    onsemi
    • Manufacturer: onsemi
    • Series: PowerTrench®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
    • Supplier Device Package: SuperSOT™-6 FLMP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 3524pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF7494TR
    MOSFET N-CH 150V 5.2A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
    • Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 3SK318YB-TL-E
    TRANS N-CH CMPAK-4
    Renesas Electronics America Inc
    • Manufacturer: Renesas Electronics America Inc
    • Package / Case: SC-82A, SOT-343
    • Supplier Device Package: CMPAK-4
    • Voltage - Rated: 6V
    • Current - Test: 10mA
    • Transistor Type: N-Channel Dual Gate
    • Gain: 21dB
    • Voltage - Test: 3.5V
    • Noise Figure: 1.4dB
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • NTQD4154ZR2
    MOSFET 2N-CH 20V 7.5A 8-TSSOP
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 7.5A
    • Rds On (Max) @ Id, Vgs: 19mOhm @ 7.5A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 16V
    • Power - Max: 1.52W
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • SI3457BDV-T1-GE3
    MOSFET P-CH 30V 3.7A 6-TSOP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.14W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • NTD5862N-1G
    N-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: DPAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 115W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APT130SM70B
    MOSFET N-CH 700V TO247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 700V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 556W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • FQPF7N65C
    MOSFET N-CH 650V 7A TO-220F
    onsemi
    • Manufacturer: onsemi
    • Series: QFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 52W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • FQPF4N25
    MOSFET N-CH 250V 2.8A TO-220F
    onsemi
    • Manufacturer: onsemi
    • Series: QFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.4A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 32W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • IRF6720S2TRPBF
    MOSFET N-CH 30V 11A DIRECTFET-S1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100