Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single 1206-8 ChipFET™

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 102
  • SI5513CDC-T1-E3
    MOSFET N/P-CH 20V 4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
    • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
    • Power - Max: 3.1W
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  • SI5856DC-T1-E3
    MOSFET N-CH 20V 4.4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N-Channel
    • FET Feature: Schottky Diode (Isolated)
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • SI5504BDC-T1-E3
    MOSFET N/P-CH 30V 4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
    • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
    • Power - Max: 3.12W, 3.1W
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  • SI5905BDC-T1-E3
    MOSFET 2P-CH 8V 4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 8V
    • Current - Continuous Drain (Id) @ 25°C: 4A
    • Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
    • Power - Max: 3.1W
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  • SI5463EDC-T1-GE3
    MOSFET P-CH 20V 3.8A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
    • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.25W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±12V
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  • SI5402BDC-T1-E3
    MOSFET N-CH 30V 4.9A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SI5471DC-T1-GE3
    MOSFET P-CH 20V 6A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2945pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±12V
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  • SI5401DC-T1-GE3
    MOSFET P-CH 20V 5.2A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
    • Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • SI5935DC-T1-E3
    MOSFET 2P-CH 20V 3A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 3A
    • Rds On (Max) @ Id, Vgs: 86mOhm @ 3A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
    • Power - Max: 1.1W
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  • SI5473DC-T1-E3
    MOSFET P-CH 12V 5.9A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
    • Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • SI5475BDC-T1-E3
    MOSFET P-CH 12V 6A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
    • Rds On (Max) @ Id, Vgs: 28mOhm @ 5.6A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 8V
    • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • SI5905DC-T1-GE3
    MOSFET 2P-CH 8V 3A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 8V
    • Current - Continuous Drain (Id) @ 25°C: 3A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
    • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
    • Power - Max: 1.1W
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  • SI5435BDC-T1-E3
    MOSFET P-CH 30V 4.3A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SI5920DC-T1-GE3
    MOSFET 2N-CH 8V 4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 8V
    • Current - Continuous Drain (Id) @ 25°C: 4A
    • Rds On (Max) @ Id, Vgs: 32mOhm @ 6.8A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V
    • Power - Max: 3.12W
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  • SI5908DC-T1-E3
    MOSFET 2N-CH 20V 4.4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.4A
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
    • Power - Max: 1.1W
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