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    • Current - Continuous Drain (Id) @ 25°C
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    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
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List Table
Found: 102
  • SI5504DC-T1-E3
    MOSFET N/P-CH 30V 2.9A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
    • Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
    • Power - Max: 1.1W
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  • SI5511DC-T1-GE3
    MOSFET N/P-CH 30V 4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
    • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
    • Power - Max: 3.1W, 2.6W
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  • SI5447DC-T1-GE3
    MOSFET P-CH 20V 3.5A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 76mOhm @ 3.5A, 4.5V
    • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • SI5903DC-T1-GE3
    MOSFET 2P-CH 20V 2.1A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2.1A
    • Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
    • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
    • Power - Max: 1.1W
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  • SI5905BDC-T1-GE3
    MOSFET 2P-CH 8V 4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 8V
    • Current - Continuous Drain (Id) @ 25°C: 4A
    • Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
    • Power - Max: 3.1W
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  • SI5935DC-T1-GE3
    MOSFET 2P-CH 20V 3A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 3A
    • Rds On (Max) @ Id, Vgs: 86mOhm @ 3A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
    • Power - Max: 1.1W
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  • SI5432DC-T1-GE3
    MOSFET N-CH 20V 6A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 8.3A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • SI5424DC-T1-GE3
    MOSFET N-CH 30V 6A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V
    • Vgs(th) (Max) @ Id: 2.3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±25V
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  • SI5461EDC-T1-GE3
    MOSFET P-CH 20V 4.5A CHIPFET
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
    • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±12V
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  • SI5515CDC-T1-GE3
    MOSFET N/P-CH 20V 4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4A
    • Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
    • Vgs(th) (Max) @ Id: 800mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
    • Power - Max: 3.1W
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  • SI5915DC-T1-E3
    MOSFET 2P-CH 8V 3.4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 8V
    • Current - Continuous Drain (Id) @ 25°C: 3.4A
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V
    • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
    • Power - Max: 1.1W
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  • SI5406DC-T1-E3
    MOSFET N-CH 12V 6.9A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 4.5V
    • Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±8V
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  • SI5404BDC-T1-E3
    MOSFET N-CH 20V 5.4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
    • Rds On (Max) @ Id, Vgs: 28mOhm @ 5.4A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • SI5443DC-T1-GE3
    MOSFET P-CH 20V 3.6A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
    • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.6A, 4.5V
    • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • SI5443DC-T1-E3
    MOSFET P-CH 20V 3.6A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
    • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.6A, 4.5V
    • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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