• Тип корпуса
  • Производитель
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 102
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
SI5504DC-T1-E3 MOSFET N/P-CH 30V 2.9A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) N and P-Channel 30V 2.9A, 2.1A Logic Level Gate 85mOhm @ 2.9A, 10V 1V @ 250µA (Min) 7.5nC @ 10V TrenchFET®
SI5511DC-T1-GE3 MOSFET N/P-CH 30V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.1W, 2.6W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) N and P-Channel 30V 4A, 3.6A Logic Level Gate 55mOhm @ 4.8A, 4.5V 2V @ 250µA 7.1nC @ 5V 435pF @ 15V TrenchFET®
SI5447DC-T1-GE3 MOSFET P-CH 20V 3.5A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.3W (Ta) 20V 3.5A (Ta) 76mOhm @ 3.5A, 4.5V 1.8V, 4.5V 450mV @ 250µA (Min) 10nC @ 4.5V ±8V TrenchFET®
SI5903DC-T1-GE3 MOSFET 2P-CH 20V 2.1A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 2.1A Logic Level Gate 155mOhm @ 2.1A, 4.5V 600mV @ 250µA (Min) 6nC @ 4.5V TrenchFET®
SI5905BDC-T1-GE3 MOSFET 2P-CH 8V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 8V 4A Logic Level Gate 80mOhm @ 3.3A, 4.5V 1V @ 250µA 11nC @ 8V 350pF @ 4V TrenchFET®
SI5935DC-T1-GE3 MOSFET 2P-CH 20V 3A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 3A Logic Level Gate 86mOhm @ 3A, 4.5V 1V @ 250µA 8.5nC @ 4.5V TrenchFET®
SI5432DC-T1-GE3 MOSFET N-CH 20V 6A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta), 6.3W (Tc) 20V 6A (Tc) 20mOhm @ 8.3A, 4.5V 2.5V, 4.5V 1.5V @ 250µA 33nC @ 10V 1200pF @ 10V ±12V TrenchFET®
SI5424DC-T1-GE3 MOSFET N-CH 30V 6A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta), 6.25W (Tc) 30V 6A (Tc) 24mOhm @ 4.8A, 10V 4.5V, 10V 2.3V @ 250µA 32nC @ 10V 950pF @ 15V ±25V TrenchFET®
SI5461EDC-T1-GE3 MOSFET P-CH 20V 4.5A CHIPFET Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.3W (Ta) 20V 4.5A (Ta) 45mOhm @ 5A, 4.5V 1.8V, 4.5V 450mV @ 250µA (Min) 20nC @ 4.5V ±12V
SI5515CDC-T1-GE3 MOSFET N/P-CH 20V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) N and P-Channel 20V 4A Logic Level Gate 36mOhm @ 6A, 4.5V 800mV @ 250µA 11.3nC @ 5V 632pF @ 10V TrenchFET®
SI5915DC-T1-E3 MOSFET 2P-CH 8V 3.4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 8V 3.4A Logic Level Gate 70mOhm @ 3.4A, 4.5V 450mV @ 250µA (Min) 9nC @ 4.5V TrenchFET®
SI5406DC-T1-E3 MOSFET N-CH 12V 6.9A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.3W (Ta) 12V 6.9A (Ta) 20mOhm @ 6.9A, 4.5V 2.5V, 4.5V 600mV @ 1.2mA (Min) 20nC @ 4.5V ±8V TrenchFET®
SI5404BDC-T1-E3 MOSFET N-CH 20V 5.4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.3W (Ta) 20V 5.4A (Ta) 28mOhm @ 5.4A, 4.5V 2.5V, 4.5V 1.5V @ 250µA 11nC @ 4.5V ±12V TrenchFET®
SI5443DC-T1-GE3 MOSFET P-CH 20V 3.6A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.3W (Ta) 20V 3.6A (Ta) 65mOhm @ 3.6A, 4.5V 2.5V, 4.5V 600mV @ 250µA (Min) 14nC @ 4.5V ±12V TrenchFET®
SI5443DC-T1-E3 MOSFET P-CH 20V 3.6A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.3W (Ta) 20V 3.6A (Ta) 65mOhm @ 3.6A, 4.5V 2.5V, 4.5V 600mV @ 250µA (Min) 14nC @ 4.5V ±12V TrenchFET®
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