• Тип корпуса
  • Производитель
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 102
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
SI5513CDC-T1-E3 MOSFET N/P-CH 20V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) N and P-Channel 20V 4A, 3.7A Logic Level Gate 55mOhm @ 4.3A, 4.5V 1.5V @ 250µA 4.2nC @ 5V 285pF @ 10V TrenchFET®
SI5856DC-T1-E3 MOSFET N-CH 20V 4.4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.1W (Ta) 20V 4.4A (Ta) Schottky Diode (Isolated) 40mOhm @ 4.4A, 4.5V 1.8V, 4.5V 1V @ 250µA 7.5nC @ 4.5V ±8V TrenchFET®
SI5504BDC-T1-E3 MOSFET N/P-CH 30V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.12W, 3.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) N and P-Channel 30V 4A, 3.7A Logic Level Gate 65mOhm @ 3.1A, 10V 3V @ 250µA 7nC @ 10V 220pF @ 15V TrenchFET®
SI5905BDC-T1-E3 MOSFET 2P-CH 8V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 8V 4A Logic Level Gate 80mOhm @ 3.3A, 4.5V 1V @ 250µA 11nC @ 8V 350pF @ 4V TrenchFET®
SI5463EDC-T1-GE3 MOSFET P-CH 20V 3.8A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.25W (Ta) 20V 3.8A (Ta) 62mOhm @ 4A, 4.5V 1.8V, 4.5V 450mV @ 250µA (Min) 15nC @ 4.5V ±12V
SI5402BDC-T1-E3 MOSFET N-CH 30V 4.9A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.3W (Ta) 30V 4.9A (Ta) 35mOhm @ 4.9A, 10V 4.5V, 10V 3V @ 250µA 20nC @ 10V ±20V TrenchFET®
SI5471DC-T1-GE3 MOSFET P-CH 20V 6A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Ta), 6.3W (Tc) 20V 6A (Tc) 20mOhm @ 9.1A, 4.5V 1.8V, 4.5V 1.1V @ 250µA 96nC @ 10V 2945pF @ 10V ±12V TrenchFET®
SI5401DC-T1-GE3 MOSFET P-CH 20V 5.2A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.3W (Ta) 20V 5.2A (Ta) 32mOhm @ 5.2A, 4.5V 1.8V, 4.5V 1V @ 250µA 25nC @ 4.5V ±8V TrenchFET®
SI5935DC-T1-E3 MOSFET 2P-CH 20V 3A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 3A Logic Level Gate 86mOhm @ 3A, 4.5V 1V @ 250µA 8.5nC @ 4.5V TrenchFET®
SI5473DC-T1-E3 MOSFET P-CH 12V 5.9A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.3W (Ta) 12V 5.9A (Ta) 27mOhm @ 5.9A, 4.5V 1.8V, 4.5V 1V @ 250µA 32nC @ 4.5V ±8V TrenchFET®
SI5475BDC-T1-E3 MOSFET P-CH 12V 6A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Ta), 6.3W (Tc) 12V 6A (Ta) 28mOhm @ 5.6A, 4.5V 1.8V, 4.5V 1V @ 250µA 40nC @ 8V 1400pF @ 6V ±8V TrenchFET®
SI5905DC-T1-GE3 MOSFET 2P-CH 8V 3A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 8V 3A Logic Level Gate 90mOhm @ 3A, 4.5V 450mV @ 250µA (Min) 9nC @ 4.5V TrenchFET®
SI5435BDC-T1-E3 MOSFET P-CH 30V 4.3A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.3W (Ta) 30V 4.3A (Ta) 45mOhm @ 4.3A, 10V 4.5V, 10V 3V @ 250µA 24nC @ 10V ±20V TrenchFET®
SI5920DC-T1-GE3 MOSFET 2N-CH 8V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.12W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 8V 4A Logic Level Gate 32mOhm @ 6.8A, 4.5V 1V @ 250µA 12nC @ 5V 680pF @ 4V TrenchFET®
SI5908DC-T1-E3 MOSFET 2N-CH 20V 4.4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 20V 4.4A Logic Level Gate 40mOhm @ 4.4A, 4.5V 1V @ 250µA 7.5nC @ 4.5V TrenchFET®
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