- Supplier Device Package
- Manufacturer
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI5511DC-T1-E3 | MOSFET N/P-CH 30V 4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 3.1W, 2.6W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 4A, 3.6A | Logic Level Gate | 55mOhm @ 4.8A, 4.5V | 2V @ 250µA | 7.1nC @ 5V | 435pF @ 15V | TrenchFET® | ||||
| SI5475BDC-T1-GE3 | MOSFET P-CH 12V 6A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta), 6.3W (Tc) | 12V | 6A (Ta) | 28mOhm @ 5.6A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 40nC @ 8V | 1400pF @ 6V | ±8V | TrenchFET® | ||
| SI5975DC-T1-E3 | MOSFET 2P-CH 12V 3.1A CHIPFET | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 12V | 3.1A | Logic Level Gate | 86mOhm @ 3.1A, 4.5V | 450mV @ 1mA (Min) | 9nC @ 4.5V | TrenchFET® | |||||
| SI5902DC-T1-E3 | MOSFET 2N-CH 30V 2.9A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 2.9A | Logic Level Gate | 85mOhm @ 2.9A, 10V | 1V @ 250µA (Min) | 7.5nC @ 10V | TrenchFET® | |||||
| SI5447DC-T1-E3 | MOSFET P-CH 20V 3.5A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 20V | 3.5A (Ta) | 76mOhm @ 3.5A, 4.5V | 1.8V, 4.5V | 450mV @ 250µA (Min) | 10nC @ 4.5V | ±8V | TrenchFET® | |||
| SI5404BDC-T1-GE3 | MOSFET N-CH 20V 5.4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.3W (Ta) | 20V | 5.4A (Ta) | 28mOhm @ 5.4A, 4.5V | 2.5V, 4.5V | 1.5V @ 250µA | 11nC @ 4.5V | ±12V | TrenchFET® | |||
| SI5920DC-T1-E3 | MOSFET 2N-CH 8V 4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 3.12W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 8V | 4A | Logic Level Gate | 32mOhm @ 6.8A, 4.5V | 1V @ 250µA | 12nC @ 5V | 680pF @ 4V | TrenchFET® | ||||
| SI5915DC-T1-GE3 | MOSFET 2P-CH 8V 3.4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 8V | 3.4A | Logic Level Gate | 70mOhm @ 3.4A, 4.5V | 450mV @ 250µA (Min) | 9nC @ 4.5V | TrenchFET® | |||||
| SI5457DC-T1-GE3 | MOSFET P-CH 20V 6A CHIPFET | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 5.7W (Tc) | 20V | 6A (Tc) | 36mOhm @ 4.9A, 4.5V | 2.5V, 4.5V | 1.4V @ 250µA | 38nC @ 10V | 1000pF @ 10V | ±12V | TrenchFET® | ||
| SI5463EDC-T1-E3 | MOSFET P-CH 20V 3.8A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.25W (Ta) | 20V | 3.8A (Ta) | 62mOhm @ 4A, 4.5V | 1.8V, 4.5V | 450mV @ 250µA (Min) | 15nC @ 4.5V | ±12V | ||||
| SI5903DC-T1-E3 | MOSFET 2P-CH 20V 2.1A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 2.1A | Logic Level Gate | 155mOhm @ 2.1A, 4.5V | 600mV @ 250µA (Min) | 6nC @ 4.5V | TrenchFET® | |||||
| SI5468DC-T1-GE3 | MOSFET N-CH 30V 6A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.3W (Ta), 5.7W (Tc) | 30V | 6A (Tc) | 28mOhm @ 6.8A, 10V | 4.5V, 10V | 2.5V @ 250µA | 12nC @ 10V | 435pF @ 15V | ±20V | TrenchFET® | ||
| SI5402DC-T1-E3 | MOSFET N-CH 30V 4.9A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.3W (Ta) | 30V | 4.9A (Ta) | 35mOhm @ 4.9A, 10V | 4.5V, 10V | 1V @ 250µA (Min) | 20nC @ 10V | ±20V | TrenchFET® | |||
| SI5441DC-T1-GE3 | MOSFET P-CH 20V 3.9A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 20V | 3.9A (Ta) | 55mOhm @ 3.9A, 4.5V | 2.5V, 4.5V | 1.4V @ 250µA | 22nC @ 4.5V | ±12V | TrenchFET® | |||
| SI5406CDC-T1-GE3 | MOSFET N-CH 12V 6A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.3W (Ta), 5.7W (Tc) | 12V | 6A (Tc) | 20mOhm @ 6.5A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 32nC @ 8V | 1100pF @ 6V | ±8V | TrenchFET® |
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