- Supplier Device Package
- Manufacturer
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI5441BDC-T1-E3 | MOSFET P-CH 20V 4.4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 20V | 4.4A (Ta) | 45mOhm @ 4.4A, 4.5V | 2.5V, 4.5V | 1.4V @ 250µA | 22nC @ 4.5V | ±12V | TrenchFET® | |||
| SI5475DDC-T1-GE3 | MOSFET P-CH 12V 6A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.3W (Ta), 5.7W (Tc) | 12V | 6A (Tc) | 32mOhm @ 5.4A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 50nC @ 8V | 1600pF @ 6V | ±8V | TrenchFET® | ||
| SI5441BDC-T1-GE3 | MOSFET P-CH 20V 4.4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 20V | 4.4A (Ta) | 45mOhm @ 4.4A, 4.5V | 2.5V, 4.5V | 1.4V @ 250µA | 22nC @ 4.5V | ±12V | TrenchFET® | |||
| SI5515DC-T1-GE3 | MOSFET N/P-CH 20V 4.4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 4.4A, 3A | Logic Level Gate | 40mOhm @ 4.4A, 4.5V | 1V @ 250µA | 7.5nC @ 4.5V | TrenchFET® | |||||
| SI5445BDC-T1-E3 | MOSFET P-CH 8V 5.2A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 8V | 5.2A (Ta) | 33mOhm @ 5.2A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 21nC @ 4.5V | ±8V | TrenchFET® | |||
| SI5509DC-T1-E3 | MOSFET N/P-CH 20V 6.1A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 4.5W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 6.1A, 4.8A | Logic Level Gate | 52mOhm @ 5A, 4.5V | 2V @ 250µA | 6.6nC @ 5V | 455pF @ 10V | TrenchFET® | ||||
| SI5475DC-T1-E3 | MOSFET P-CH 12V 5.5A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 12V | 5.5A (Ta) | 31mOhm @ 5.5A, 4.5V | 1.8V, 4.5V | 450mV @ 1mA (Min) | 29nC @ 4.5V | ±8V | TrenchFET® | |||
| SI5933CDC-T1-GE3 | MOSFET 2P-CH 20V 3.7A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 2.8W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 3.7A | Standard | 144mOhm @ 2.5A, 4.5V | 1V @ 250µA | 6.8nC @ 5V | 276pF @ 10V | TrenchFET® | ||||
| SI5402DC-T1-GE3 | MOSFET N-CH 30V 4.9A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.3W (Ta) | 30V | 4.9A (Ta) | 35mOhm @ 4.9A, 10V | 4.5V, 10V | 1V @ 250µA (Min) | 20nC @ 10V | ±20V | TrenchFET® | |||
| SI5975DC-T1-GE3 | MOSFET 2P-CH 12V 3.1A CHIPFET | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 12V | 3.1A | Logic Level Gate | 86mOhm @ 3.1A, 4.5V | 450mV @ 1mA (Min) | 9nC @ 4.5V | TrenchFET® | |||||
| SI5913DC-T1-E3 | MOSFET P-CH 20V 4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.7W (Ta), 3.1W (Tc) | 20V | 4A (Tc) | Schottky Diode (Isolated) | 84mOhm @ 3.7A, 10V | 2.5V, 10V | 1.5V @ 250µA | 12nC @ 10V | 330pF @ 10V | ±12V | LITTLE FOOT® | |
| SI5461EDC-T1-E3 | MOSFET P-CH 20V 4.5A CHIPFET | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 20V | 4.5A (Ta) | 45mOhm @ 5A, 4.5V | 1.8V, 4.5V | 450mV @ 250µA (Min) | 20nC @ 4.5V | ±12V | ||||
| SI5449DC-T1-E3 | MOSFET P-CH 30V 3.1A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 30V | 3.1A (Ta) | 85mOhm @ 3.1A, 4.5V | 2.5V, 4.5V | 600mV @ 250µA (Min) | 11nC @ 4.5V | ±12V | TrenchFET® | |||
| SI5414DC-T1-GE3 | MOSFET N-CH 20V 6A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta), 6.3W (Tc) | 20V | 6A (Tc) | 17mOhm @ 9.9A, 4.5V | 2.5V, 4.5V | 1.5V @ 250µA | 41nC @ 10V | 1500pF @ 10V | ±12V | TrenchFET® | ||
| SI5935CDC-T1-GE3 | MOSFET 2P-CH 20V 4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 3.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4A | Standard | 100mOhm @ 3.1A, 4.5V | 1V @ 250µA | 11nC @ 5V | 455pF @ 10V | TrenchFET® |
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