- Supplier Device Package
- Manufacturer
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI5403DC-T1-GE3 | MOSFET P-CH 30V 6A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta), 6.3W (Tc) | 30V | 6A (Tc) | 30mOhm @ 7.2A, 10V | 4.5V, 10V | 3V @ 250µA | 42nC @ 10V | 1340pF @ 15V | ±20V | TrenchFET® | ||
| SI5515DC-T1-E3 | MOSFET N/P-CH 20V 4.4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 4.4A, 3A | Logic Level Gate | 40mOhm @ 4.4A, 4.5V | 1V @ 250µA | 7.5nC @ 4.5V | TrenchFET® | |||||
| SI5475DC-T1-GE3 | MOSFET P-CH 12V 5.5A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 12V | 5.5A (Ta) | 31mOhm @ 5.5A, 4.5V | 1.8V, 4.5V | 450mV @ 1mA (Min) | 29nC @ 4.5V | ±8V | TrenchFET® | |||
| SI5515CDC-T1-E3 | MOSFET N/P-CH 20V 4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 3.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 4A (Tc) | Logic Level Gate | 36mOhm @ 6A, 4.5V | 800mV @ 250µA | 11.3nC @ 5V | 632pF @ 10V | TrenchFET® | ||||
| SI5406DC-T1-GE3 | MOSFET N-CH 12V 6.9A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.3W (Ta) | 12V | 6.9A (Ta) | 20mOhm @ 6.9A, 4.5V | 2.5V, 4.5V | 600mV @ 1.2mA (Min) | 20nC @ 4.5V | ±8V | TrenchFET® | |||
| SI5433BDC-T1-E3 | MOSFET P-CH 20V 4.8A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 20V | 4.8A (Ta) | 37mOhm @ 4.8A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 22nC @ 4.5V | ±8V | TrenchFET® | |||
| SI5853DC-T1-E3 | MOSFET P-CH 20V 2.7A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.1W (Ta) | 20V | 2.7A (Ta) | Schottky Diode (Isolated) | 110mOhm @ 2.7A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | ±8V | LITTLE FOOT® | ||
| SI5504DC-T1-GE3 | MOSFET N/P-CH 30V 2.9A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 2.9A, 2.1A | Logic Level Gate | 85mOhm @ 2.9A, 10V | 1V @ 250µA (Min) | 7.5nC @ 10V | TrenchFET® | |||||
| SI5513CDC-T1-GE3 | MOSFET N/P-CH 20V 4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 3.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 4A, 3.7A | Logic Level Gate | 55mOhm @ 4.4A, 4.5V | 1.5V @ 250µA | 4.2nC @ 5V | 285pF @ 10V | TrenchFET® | ||||
| SI5401DC-T1-E3 | MOSFET P-CH 20V 5.2A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 20V | 5.2A (Ta) | 32mOhm @ 5.2A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 25nC @ 4.5V | ±8V | TrenchFET® | |||
| SI5855DC-T1-E3 | MOSFET P-CH 20V 2.7A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.1W (Ta) | 20V | 2.7A (Ta) | Schottky Diode (Isolated) | 110mOhm @ 2.7A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | ±8V | TrenchFET® | ||
| SI5499DC-T1-E3 | MOSFET P-CH 8V 6A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta), 6.2W (Tc) | 8V | 6A (Tc) | 36mOhm @ 5.1A, 4.5V | 1.5V, 4.5V | 800mV @ 250µA | 35nC @ 8V | 1290pF @ 4V | ±5V | TrenchFET® | ||
| SI5853CDC-T1-E3 | MOSFET P-CH 20V 4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.5W (Ta), 3.1W (Tc) | 20V | 4A (Tc) | Schottky Diode (Isolated) | 104mOhm @ 2.5A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 11nC @ 8V | 350pF @ 10V | ±8V | LITTLE FOOT® | |
| SI5905DC-T1-E3 | MOSFET 2P-CH 8V 3A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 8V | 3A | Logic Level Gate | 90mOhm @ 3A, 4.5V | 450mV @ 250µA (Min) | 9nC @ 4.5V | TrenchFET® | |||||
| SI5855CDC-T1-E3 | MOSFET P-CH 20V 3.7A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta), 2.8W (Tc) | 20V | 3.7A (Tc) | Schottky Diode (Isolated) | 144mOhm @ 2.5A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 6.8nC @ 5V | 276pF @ 10V | ±8V | LITTLE FOOT® |
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