Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single 12-BGA (2x2.5)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 5
  • FDZ202P
    MOSFET P-CH 20V 5.5A BGA
    onsemi
    • Manufacturer: onsemi
    • Series: PowerTrench®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 12-WFBGA
    • Supplier Device Package: 12-BGA (2x2.5)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 5.5A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 884pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • FDZ209N
    N-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Series: PowerTrench®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 12-WFBGA
    • Supplier Device Package: 12-BGA (2x2.5)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
    • Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 5V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): ±20V
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  • FDZ202P
    P-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Series: PowerTrench®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 12-WFBGA
    • Supplier Device Package: 12-BGA (2x2.5)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 5.5A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 884pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • FDZ201N
    MOSFET N-CH 20V 9A BGA
    onsemi
    • Manufacturer: onsemi
    • Series: PowerTrench®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 12-WFBGA
    • Supplier Device Package: 12-BGA (2x2.5)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
    • Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1127pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • FDZ209N
    MOSFET N-CH 60V 4A 12-BGA
    onsemi
    • Manufacturer: onsemi
    • Series: PowerTrench®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 12-WFBGA
    • Supplier Device Package: 12-BGA (2x2.5)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
    • Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 5V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): ±20V
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