Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single 10-PolarPAK® (S)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 10
  • SIE830DF-T1-E3
    MOSFET N-CH 30V 50A 10-POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: WFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (S)
    • Supplier Device Package: 10-PolarPAK® (S)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±12V
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  • SIE830DF-T1-GE3
    MOSFET N-CH 30V 50A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: WFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (S)
    • Supplier Device Package: 10-PolarPAK® (S)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±12V
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  • SIE820DF-T1-GE3
    MOSFET N-CH 20V 50A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (S)
    • Supplier Device Package: 10-PolarPAK® (S)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • SIE820DF-T1-E3
    MOSFET N-CH 20V 50A 10-POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (S)
    • Supplier Device Package: 10-PolarPAK® (S)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • SIE822DF-T1-GE3
    MOSFET N-CH 20V 50A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (S)
    • Supplier Device Package: 10-PolarPAK® (S)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE822DF-T1-E3
    MOSFET N-CH 20V 50A 10-POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (S)
    • Supplier Device Package: 10-PolarPAK® (S)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE832DF-T1-GE3
    MOSFET N-CH 40V 50A 10-POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (S)
    • Supplier Device Package: 10-PolarPAK® (S)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE800DF-T1-GE3
    MOSFET N-CH 30V 50A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (S)
    • Supplier Device Package: 10-PolarPAK® (S)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE800DF-T1-E3
    MOSFET N-CH 30V 50A 10-POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (S)
    • Supplier Device Package: 10-PolarPAK® (S)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE832DF-T1-E3
    MOSFET N-CH 40V 50A 10-POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (S)
    • Supplier Device Package: 10-PolarPAK® (S)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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