Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single 12-DSBGA

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 3
  • CSD75211W1723
    MOSFET 2P-CH 20V 4.5A 12DSBGA
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 12-UFBGA, DSBGA
    • Supplier Device Package: 12-DSBGA
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
    • Power - Max: 1.5W
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  • CSD75211W1723
    P-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 12-UFBGA, DSBGA
    • Supplier Device Package: 12-DSBGA
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
    • Power - Max: 1.5W
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  • CSD86311W1723
    MOSFET 2N-CH 25V 4.5A 12DSBGA
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 12-UFBGA, DSBGA
    • Supplier Device Package: 12-DSBGA
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A
    • Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V
    • Vgs(th) (Max) @ Id: 1.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V
    • Power - Max: 1.5W
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