- Supplier Device Package
- Manufacturer
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CSD75211W1723 | P-CHANNEL POWER MOSFET | Rochester Electronics, LLC | 12-DSBGA | 1.5W | Surface Mount | 12-UFBGA, DSBGA | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4.5A | Logic Level Gate | 40mOhm @ 2A, 4.5V | 1.1V @ 250µA | 5.9nC @ 4.5V | 600pF @ 10V | NexFET™ |
CSD86311W1723 | MOSFET 2N-CH 25V 4.5A 12DSBGA | Texas Instruments | 12-DSBGA | 1.5W | Surface Mount | 12-UFBGA, DSBGA | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 25V | 4.5A | Logic Level Gate | 39mOhm @ 2A, 8V | 1.4V @ 250µA | 4nC @ 4.5V | 585pF @ 12.5V | NexFET™ |
CSD75211W1723 | MOSFET 2P-CH 20V 4.5A 12DSBGA | Texas Instruments | 12-DSBGA | 1.5W | Surface Mount | 12-UFBGA, DSBGA | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4.5A | Logic Level Gate | 40mOhm @ 2A, 4.5V | 1.1V @ 250µA | 5.9nC @ 4.5V | 600pF @ 10V | NexFET™ |
- 10
- 15
- 50
- 100