Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single 14-DIP

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 7
  • VQ1006P-E3
    MOSFET 4N-CH 90V 0.4A 14DIP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Supplier Device Package: 14-DIP
    • FET Type: 4 N-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 90V
    • Current - Continuous Drain (Id) @ 25°C: 400mA
    • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
    • Power - Max: 2W
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  • VQ1001P-E3
    MOSFET 4N-CH 30V 0.83A 14DIP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Supplier Device Package: 14-DIP
    • FET Type: 4 N-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 830mA
    • Rds On (Max) @ Id, Vgs: 1.75Ohm @ 200mA, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
    • Power - Max: 2W
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  • VQ1006P-2
    MOSFET 4N-CH 90V 0.4A 14DIP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Supplier Device Package: 14-DIP
    • FET Type: 4 N-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 90V
    • Current - Continuous Drain (Id) @ 25°C: 400mA
    • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
    • Power - Max: 2W
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  • VQ1001P
    MOSFET 4N-CH 30V 0.83A 14DIP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Supplier Device Package: 14-DIP
    • FET Type: 4 N-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 830mA
    • Rds On (Max) @ Id, Vgs: 1.75Ohm @ 200mA, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
    • Power - Max: 2W
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  • VQ1001P-2
    MOSFET 4N-CH 30V 0.83A 14DIP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Supplier Device Package: 14-DIP
    • FET Type: 4 N-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 830mA
    • Rds On (Max) @ Id, Vgs: 1.75Ohm @ 200mA, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
    • Power - Max: 2W
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  • VQ2001P-2
    MOSFET 4P-CH 30V 0.6A 14DIP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 14-DIP
    • Supplier Device Package: 14-DIP
    • FET Type: 4 P-Channel
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 600mA
    • Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
    • Vgs(th) (Max) @ Id: 4.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
    • Power - Max: 2W
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  • VQ1006P
    MOSFET 4N-CH 90V 0.4A 14DIP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Supplier Device Package: 14-DIP
    • FET Type: 4 N-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 90V
    • Current - Continuous Drain (Id) @ 25°C: 400mA
    • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
    • Power - Max: 2W
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