• Supplier Device Package
  • Manufacturer
  • Power - Output
  • Voltage - Rated
Found: 7
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Mounting Type
Package / Case
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
VQ1006P-E3 MOSFET 4N-CH 90V 0.4A 14DIP Vishay Siliconix 14-DIP 2W Through Hole -55°C ~ 150°C (TJ) 4 N-Channel 90V 400mA Logic Level Gate 4.5Ohm @ 1A, 10V 2.5V @ 1mA 60pF @ 25V
VQ1001P-E3 MOSFET 4N-CH 30V 0.83A 14DIP Vishay Siliconix 14-DIP 2W Through Hole -55°C ~ 150°C (TJ) 4 N-Channel 30V 830mA Logic Level Gate 1.75Ohm @ 200mA, 5V 2.5V @ 1mA 110pF @ 15V
VQ1006P-2 MOSFET 4N-CH 90V 0.4A 14DIP Vishay Siliconix 14-DIP 2W Through Hole -55°C ~ 150°C (TJ) 4 N-Channel 90V 400mA Logic Level Gate 4.5Ohm @ 1A, 10V 2.5V @ 1mA 60pF @ 25V
VQ1001P MOSFET 4N-CH 30V 0.83A 14DIP Vishay Siliconix 14-DIP 2W Through Hole -55°C ~ 150°C (TJ) 4 N-Channel 30V 830mA Logic Level Gate 1.75Ohm @ 200mA, 5V 2.5V @ 1mA 110pF @ 15V
VQ1001P-2 MOSFET 4N-CH 30V 0.83A 14DIP Vishay Siliconix 14-DIP 2W Through Hole -55°C ~ 150°C (TJ) 4 N-Channel 30V 830mA Logic Level Gate 1.75Ohm @ 200mA, 5V 2.5V @ 1mA 110pF @ 15V
VQ2001P-2 MOSFET 4P-CH 30V 0.6A 14DIP Vishay Siliconix 14-DIP 2W Through Hole 14-DIP -55°C ~ 150°C (TJ) 4 P-Channel 30V 600mA Standard 2Ohm @ 1A, 12V 4.5V @ 1mA 150pF @ 15V
VQ1006P MOSFET 4N-CH 90V 0.4A 14DIP Vishay Siliconix 14-DIP 2W Through Hole -55°C ~ 150°C (TJ) 4 N-Channel 90V 400mA Logic Level Gate 4.5Ohm @ 1A, 10V 2.5V @ 1mA 60pF @ 25V