• Manufacturer
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  • Voltage - Rated
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    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 46889
  • IRFD214
    MOSFET N-CH 250V 450MA 4-DIP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-DIP (0.300", 7.62mm)
    • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
    • Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • PHP78NQ03LT,127
    MOSFET N-CH 25V 75A TO220AB
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Series: TrenchMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1074pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 93W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±20V
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  • SI4634DY-T1-E3
    MOSFET N-CH 30V 24.5A 8-SOIC
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 2.6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IPW65R190E6FKSA1
    N-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
    • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 730µA
    • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1.62pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 151W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF9640STRRPBF
    MOSFET P-CH 200V 11A D2PAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
    • Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • SPN02N60S5
    MOSFET N-CH 600V 0.4A SOT-223
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: PG-SOT223-4
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
    • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 80µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRL1404ZSPBF
    MOSFET N-CH 40V 75A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 2.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • NVGS4141NT1G
    MOSFET N-CH 30V 3.5A 6TSOP
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 24V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • UPA503T-T1-A
    SMALL SIGNAL P-CHANNEL MOSFET
    Renesas Electronics America Inc
    • Manufacturer: Renesas Electronics America Inc
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SC-59-5, Mini Mold
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 50V
    • Current - Continuous Drain (Id) @ 25°C: 100mA
    • Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 1µA
    • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V
    • Power - Max: 300mW
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  • BLC9G20LS-470AVTZ
    RF FET LDMOS 65V 15.7DB SOT12583
    Ampleon USA Inc.
    • Manufacturer: Ampleon USA Inc.
    • Package / Case: SOT-1258-3
    • Supplier Device Package: DFM6
    • Frequency: 1.81GHz ~ 1.88GHz
    • Voltage - Rated: 65V
    • Current - Test: 400mA
    • Power - Output: 470W
    • Transistor Type: LDMOS (Dual), Common Source
    • Gain: 15.7dB
    • Voltage - Test: 28V
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  • NDS355AN_G
    MOSFET N-CH 30V 1.7A SSOT3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SuperSOT-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IXTH12N100
    MOSFET N-CH 1000V 12A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: MegaMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 (IXTH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • JANTXV2N6760
    MOSFET N-CH
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/542
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-204AA (TO-3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 400V
    • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4W (Ta), 75W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB80N04S403ATMA1
    MOSFET N-CH 40V 80A TO263-3-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: PG-TO263-3-2
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 53µA
    • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5260pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 94W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • VRF154FL
    MOSFET RF PWR N-CH 50V 600W T2
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Package / Case: T2
    • Supplier Device Package: T2
    • Frequency: 80MHz
    • Voltage - Rated: 170V
    • Current - Test: 800mA
    • Power - Output: 600W
    • Transistor Type: N-Channel
    • Gain: 17dB
    • Voltage - Test: 50V
    • Current Rating (Amps): 4mA
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