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  • Supplier Device Package
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  • Voltage - Rated
    • Package / Case
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    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 46889
  • STL100N6LF6
    MOSFET N CH 60V 100A PWRFLAT 5X6
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: DeepGATE™, STripFET™ VI
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: PowerFlat™ (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4.8W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRLI540GPBF
    MOSFET N-CH 100V 17A TO220FP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
    • Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 48W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
    • Vgs (Max): ±10V
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  • ZXMN10A25GTA
    MOSFET N-CH 100V 2.9A SOT223
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
    • Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 859pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FQNL1N50BBU
    N-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Series: QFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 270mA (Tc)
    • Rds On (Max) @ Id, Vgs: 9Ohm @ 135mA, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • SMP3003-DL-1EX
    MOSFET P-CH 75V 100A SMP-FD
    onsemi
    • Manufacturer: onsemi
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  • DMN3013LFG-13
    MOSFET BVDSS: 25V-30V POWERDI333
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerLDFN
    • Supplier Device Package: PowerDI3333-8 (Type D)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
    • Power - Max: 2.16W (Ta)
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  • AO7800
    MOSFET 2N-CH 20V SC70-6
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SC-70-6
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 900mA
    • Rds On (Max) @ Id, Vgs: 300mOhm @ 900mA, 4.5V
    • Vgs(th) (Max) @ Id: 900mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
    • Power - Max: 300mW
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  • SP8K33TB1
    MOSFET 2N-CH 60V 8SOP
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
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  • ZVP1320ASTOA
    MOSFET P-CH 200V 0.07A TO92-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: E-Line-3
    • Supplier Device Package: E-Line (TO-92 compatible)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
    • Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 625mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • PHP225,118-NXP
    SMALL SIGNAL FIELD-EFFECT TRANSI
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
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  • DMTH8012LK3Q-13
    MOSFET NCH 80V 50A TO252
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252, (D-Pak)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2051pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.6W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • STB40N20
    MOSFET N-CH 200V 40A D2PAK
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: STripFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 160W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • PTFA190451FV4R250XTMA1
    IC FET RF LDMOS 45W H-37265-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Package / Case: 2-Flatpack, Fin Leads, Flanged
    • Supplier Device Package: H-37265-2
    • Frequency: 1.96GHz
    • Voltage - Rated: 65V
    • Current - Test: 450mA
    • Power - Output: 11W
    • Transistor Type: LDMOS
    • Gain: 17.5dB
    • Voltage - Test: 28V
    • Current Rating (Amps): 10µA
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  • SI7164DP-T1-GE3
    MOSFET N-CH 60V 60A PPAK SO-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: PowerPAK® SO-8
    • Supplier Device Package: PowerPAK® SO-8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF3805PBF
    MOSFET N-CH 55V 75A TO-220AB
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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