- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDS8928A | POWER FIELD-EFFECT TRANSISTOR, 5 | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V, 20V | 5.5A, 4A | Logic Level Gate | 30mOhm @ 5.5A, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 900pF @ 10V | |||||||||
| FDC6322C | SMALL SIGNAL P-CHANNEL MOSFET | Fairchild Semiconductor | SuperSOT™-6 | 700mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | -55°C ~ 150°C (TJ) | N and P-Channel | 25V | 220mA, 460mA | Logic Level Gate | 4Ohm @ 400mA, 4.5V | 1.5V @ 250µA | 0.7nC @ 4.5V | 9.5pF @ 10V | |||||||||
| FDMS3604AS | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-PQFN (5x6) | 1W | Surface Mount | 8-PowerTDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 30V | 13A, 23A | Logic Level Gate | 8mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | 1695pF @ 15V | PowerTrench® | ||||||||
| FDW2508P | SMALL SIGNAL P-CHANNEL MOSFET | Fairchild Semiconductor | 8-TSSOP | 1W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 12V | 6A | Logic Level Gate | 18mOhm @ 6A, 4.5V | 1.5V @ 250µA | 36nC @ 4.5V | 2644pF @ 6V | PowerTrench® | ||||||||
| FDMC8298 | N-CHANNEL POWER TRENCH MOSFET | Fairchild Semiconductor | Die | Surface Mount | Die | |||||||||||||||||||
| HUFA76429D3ST_QF085 | 20A, 60V, 0.029OHM, N CHANNEL , | Fairchild Semiconductor | ||||||||||||||||||||||
| FDS4501H | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-SOIC | 1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V, 20V | 9.3A, 5.6A | Logic Level Gate | 18mOhm @ 9.3A, 10V | 3V @ 250µA | 27nC @ 4.5V | 1958pF @ 10V | PowerTrench® | ||||||||
| FDMD8280 | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 12-Power3.3x5 | 1W | Surface Mount | 12-PowerWDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 80V | 11A | Standard | 8.2mOhm @ 11A, 10V | 4V @ 250µA | 44nC @ 10V | 3050pF @ 40V | PowerTrench® | ||||||||
| FDS4935A | POWER FIELD-EFFECT TRANSISTOR, 7 | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 175°C (TJ) | 2 P-Channel (Dual) | 30V | 7A | Logic Level Gate | 23mOhm @ 7A, 10V | 3V @ 250µA | 21nC @ 5V | 1233pF @ 15V | PowerTrench® | ||||||||
| HUF76113DK8T | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | US8 | 2.5W (Ta) | Surface Mount | 8-VFSOP (0.091", 2.30mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 6A (Ta) | Logic Level Gate | 32mOhm @ 6A, 10V | 3V @ 250µA | 19.2nC @ 10V | 605pF @ 25V | UltraFET™ | ||||||||
| FDI9406 | 110A, 40V, N CHANNEL, MOSFET, T | Fairchild Semiconductor | ||||||||||||||||||||||
| FDS8958 | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 7A, 5A | Logic Level Gate | 28mOhm @ 7A, 10V | 3V @ 250µA | 26nC @ 10V | 789pF @ 10V | PowerTrench® | ||||||||
| FDMQ8403 | POWER FIELD-EFFECT TRANSISTOR, 3 | Fairchild Semiconductor | 12-MLP (5x4.5) | 1.9W | Surface Mount | 12-WDFN Exposed Pad | -55°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 100V | 3.1A | Standard | 110mOhm @ 3A, 10V | 4V @ 250µA | 5nC @ 10V | 215pF @ 15V | GreenBridge™ PowerTrench® | ||||||||
| FDM2452NZ | SMALL SIGNAL N-CHANNEL MOSFET | Fairchild Semiconductor | 6-MLP (2x5) | 800mW (Ta) | Surface Mount | 6-WFDFN Exposed Pad | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Common Drain | 30V | 8.1A (Ta) | Standard | 21mOhm @ 8.1A, 4.5V | 1.5V @ 250µA | 19nC @ 4.5V | 980pF @ 15V | PowerTrench® | ||||||||
| FDBL86210 | N-CHANNEL POWER MOSFET | Fairchild Semiconductor |
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