-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
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- Manufacturer: Fairchild Semiconductor
- Series: SOT-23
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
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- Manufacturer: IXYS
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Reverse Recovery Time (trr): 50ns
- Power - Max: 200W
- Input Type: Standard
- Current - Collector (Ic) (Max): 55A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 480V, 30A, 4.7Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Current - Collector Pulsed (Icm): 110A
- Switching Energy: 700µJ (off)
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 30ns/90ns
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- Manufacturer: Microchip Technology
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
- Power - Max: 962W
- Input Type: Standard
- Current - Collector (Ic) (Max): 170A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 85A, 4.3Ohm, 15V
- IGBT Type: NPT
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
- Current - Collector Pulsed (Icm): 340A
- Switching Energy: 6mJ (on), 3.8mJ (off)
- Gate Charge: 660nC
- Td (on/off) @ 25°C: 43ns/300ns
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- Manufacturer: IXYS
- Series: MegaMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 300W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/542
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 4W (Ta), 75W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 2nA (ICBO)
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
- Current - Collector Cutoff (Max): 10nA (ICBO)
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- Manufacturer: Infineon Technologies
- Series: OptiMOS™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 53µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5260pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 94W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: Microchip Technology
- Package / Case: T2
- Supplier Device Package: T2
- Frequency: 80MHz
- Voltage - Rated: 170V
- Current - Test: 800mA
- Power - Output: 600W
- Transistor Type: N-Channel
- Gain: 17dB
- Voltage - Test: 50V
- Current Rating (Amps): 4mA
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
- Power - Max: 75W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 800mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
- Current - Collector Cutoff (Max): 10µA (ICBO)
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- Manufacturer: onsemi
- Series: Automotive, AEC-Q101, PowerTrench®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PQFN (5x6)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 20V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 214W (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±16V
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Power - Max: 100W
- Input Type: Standard
- Current - Collector (Ic) (Max): 28A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 480V, 16A, 23Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
- Current - Collector Pulsed (Icm): 58A
- Switching Energy: 360µJ (on), 510µJ (off)
- Gate Charge: 67nC
- Td (on/off) @ 25°C: 26ns/130ns
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 2W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 50mA, 5A
- Current - Collector Cutoff (Max): 500µA
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- Manufacturer: STMicroelectronics
- Series: MDmesh™ V
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 330W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±25V
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- 100