• Configuration
    • Current Rating (Amps)
    • Transistor Type
    • Technology
    • Operating Temperature
    • Supplier Device Package
    • Input Type
    • FET Type
    • IGBT Type
    • Resistor - Base (R1)
    • Vce Saturation (Max) @ Ib, Ic
    • Power - Output
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Resistor - Emitter Base (R2)
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Test Condition
    • Voltage - Test
    • Current - Test
    • Current - Collector Pulsed (Icm)
    • Noise Figure (dB Typ @ f)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Voltage - Breakdown (V(BR)GSS)
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Current Drain (Id) - Max
    • Series
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List Table
Found: 94756
  • BC849CWH6327XTSA1
    TRANS NPN 30V 0.1A SOT323
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: PG-SOT323
    • Power - Max: 250mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 250MHz
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  • IRL1404ZSPBF
    MOSFET N-CH 40V 75A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 2.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • APTGF180DU60TG
    IGBT MODULE 600V 220A 833W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Dual, Common Source
    • Power - Max: 833W
    • Current - Collector (Ic) (Max): 220A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 300µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
    • Input Capacitance (Cies) @ Vce: 8.6nF @ 25V
    • NTC Thermistor: Yes
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  • BC847BU3HZGT106
    TRANS NPN 45V 0.1A UMT3
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: UMT3
    • Power - Max: 200mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Frequency - Transition: 200MHz
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  • JAN2N5662
    TRANS NPN 200V 2A TO5
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/454
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AA, TO-5-3 Metal Can
    • Supplier Device Package: TO-5
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 2A
    • Voltage - Collector Emitter Breakdown (Max): 200V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
    • Current - Collector Cutoff (Max): 200nA
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  • NVGS4141NT1G
    MOSFET N-CH 30V 3.5A 6TSOP
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6
    • Supplier Device Package: 6-TSOP
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 24V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • ZXTP2012A
    TRANS PNP 60V 3.5A TO92-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
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  • IXGK82N120B3
    IGBT 1200V 230A 1250W TO264
    IXYS
    • Manufacturer: IXYS
    • Series: GenX3™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264 (IXGK)
    • Power - Max: 1250W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 230A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 80A, 2Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
    • Current - Collector Pulsed (Icm): 500A
    • Switching Energy: 5mJ (on), 3.3mJ (off)
    • Gate Charge: 350nC
    • Td (on/off) @ 25°C: 30ns/210ns
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  • UPA503T-T1-A
    SMALL SIGNAL P-CHANNEL MOSFET
    Renesas Electronics America Inc
    • Manufacturer: Renesas Electronics America Inc
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SC-59-5, Mini Mold
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 50V
    • Current - Continuous Drain (Id) @ 25°C: 100mA
    • Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 1µA
    • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V
    • Power - Max: 300mW
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  • BLC9G20LS-470AVTZ
    RF FET LDMOS 65V 15.7DB SOT12583
    Ampleon USA Inc.
    • Manufacturer: Ampleon USA Inc.
    • Package / Case: SOT-1258-3
    • Supplier Device Package: DFM6
    • Frequency: 1.81GHz ~ 1.88GHz
    • Voltage - Rated: 65V
    • Current - Test: 400mA
    • Power - Output: 470W
    • Transistor Type: LDMOS (Dual), Common Source
    • Gain: 15.7dB
    • Voltage - Test: 28V
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  • IXSN50N60BD2
    IGBT MOD 600V 75A 250W SOT227B
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • Configuration: Single
    • Power - Max: 250W
    • Current - Collector (Ic) (Max): 75A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 350µA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
    • Input Capacitance (Cies) @ Vce: 3.85nF @ 25V
    • NTC Thermistor: No
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  • NDS355AN_G
    MOSFET N-CH 30V 1.7A SSOT3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SuperSOT-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • BCX52TA
    TRANS PNP 60V 1A SOT89-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: SOT-89-3
    • Power - Max: 1W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 150MHz
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  • CP216-2N4392-CM
    JFET N-CH SWITCH CHOPPER
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Voltage - Cutoff (VGS off) @ Id: 2V @ 1A
    • Resistance - RDS(On): 60 Ohms
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  • IRGP50B60PDPBF
    IGBT 600V 75A 370W TO247AC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AC
    • Reverse Recovery Time (trr): 50ns
    • Power - Max: 370W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 75A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 390V, 33A, 3.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 360µJ (on), 380µJ (off)
    • Gate Charge: 240nC
    • Td (on/off) @ 25°C: 34ns/130ns
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