-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
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- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 68W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±16V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 46A (Tc)
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 30V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 40W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7A
- Voltage - Collector Emitter Breakdown (Max): 70V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 4MHz
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- Manufacturer: Microsemi Corporation
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- Manufacturer: onsemi
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 250mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Power - Max: 350mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 40MHz
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- Manufacturer: CEL
- Package / Case: 4-Micro-X
- Supplier Device Package: 4-Micro-X
- Frequency: 12GHz
- Voltage - Rated: 4V
- Current - Test: 10mA
- Power - Output: 125mW
- Transistor Type: pHEMT FET
- Gain: 13.7dB
- Voltage - Test: 2V
- Noise Figure: 0.5dB
- Current Rating (Amps): 15mA
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
- Configuration: Asymmetrical Bridge
- Power - Max: 690W
- Current - Collector (Ic) (Max): 220A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 350µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
- Input Capacitance (Cies) @ Vce: 10.7nF @ 25V
- NTC Thermistor: No
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- Manufacturer: Rochester Electronics, LLC
- Series: QFET®
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
- Rds On (Max) @ Id, Vgs: 960mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 120W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/354
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UB
- Power - Max: 400mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 10nA
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Power - Max: 330mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- Frequency - Transition: 250MHz
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 250nA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Micro Commercial Co
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
- Power - Max: 1.25W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 50MHz
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