-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
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- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 300W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: onsemi
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- Manufacturer: Vishay Siliconix
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs (Max): ±10V
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 170mA
- Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 350mW
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Infineon Technologies
- Series: SIPMOS®
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 40W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 8-PowerUDFN
- Supplier Device Package: HUML2020L8
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
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- Manufacturer: Vishay Siliconix
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 700mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 125°C
- Package / Case: Module
- Supplier Device Package: Module
- Configuration: Three Phase Inverter
- Power - Max: 64W
- Current - Collector (Ic) (Max): 16A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 1mA
- Input: Standard
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
- Input Capacitance (Cies) @ Vce: 700pF @ 25V
- NTC Thermistor: No
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 47W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Rohm Semiconductor
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
- Power - Max: 150mW
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
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- Manufacturer: Microchip Technology
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
- Power - Max: 267W
- Input Type: Standard
- Current - Collector (Ic) (Max): 30A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 15A, 10Ohm, 15V
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Current - Collector Pulsed (Icm): 45A
- Switching Energy: 740µJ (on), 600µJ (off)
- Gate Charge: 41nC
- Td (on/off) @ 25°C: 30ns/70ns
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- Manufacturer: IXYS
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247™-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 2500V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 417W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- 10
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- 100