-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
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- Manufacturer: NXP USA Inc.
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP3
- Supplier Device Package: SP3
- Configuration: Full Bridge Inverter
- Power - Max: 62W
- Current - Collector (Ic) (Max): 32A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 250µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
- Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
- NTC Thermistor: Yes
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Power - Max: 330mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
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- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/391
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
- Power - Max: 800mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
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- Manufacturer: Diodes Incorporated
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2051pF @ 40V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.6W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- Power - Max: 960mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 180MHz
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- Manufacturer: STMicroelectronics
- Series: STripFET™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 160W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: Infineon Technologies
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37265-2
- Frequency: 1.96GHz
- Voltage - Rated: 65V
- Current - Test: 450mA
- Power - Output: 11W
- Transistor Type: LDMOS
- Gain: 17.5dB
- Voltage - Test: 28V
- Current Rating (Amps): 10µA
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
- Power - Max: 50mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
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- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92L-A1
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Reverse Recovery Time (trr): 80ns
- Power - Max: 595W
- Input Type: Standard
- Current - Collector (Ic) (Max): 100A
- Voltage - Collector Emitter Breakdown (Max): 650V
- Test Condition: 400V, 75A, 10Ohm, 15V
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Current - Collector Pulsed (Icm): 200A
- Switching Energy: 1.5mJ (on), 1mJ (off)
- Gate Charge: 310nC
- Td (on/off) @ 25°C: 110ns/270ns
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- Manufacturer: Nexperia USA Inc.
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/349
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 µA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 1µA
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- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: PowerPAK® SO-8
- Supplier Device Package: PowerPAK® SO-8
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 30V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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