• Configuration
    • Current Rating (Amps)
    • Transistor Type
    • Technology
    • Operating Temperature
    • Supplier Device Package
    • Input Type
    • FET Type
    • IGBT Type
    • Resistor - Base (R1)
    • Vce Saturation (Max) @ Ib, Ic
    • Power - Output
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Resistor - Emitter Base (R2)
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Test Condition
    • Voltage - Test
    • Current - Test
    • Current - Collector Pulsed (Icm)
    • Noise Figure (dB Typ @ f)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Voltage - Breakdown (V(BR)GSS)
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Current Drain (Id) - Max
    • Series
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List Table
Found: 94756
  • STL100N6LF6
    MOSFET N CH 60V 100A PWRFLAT 5X6
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: DeepGATE™, STripFET™ VI
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: PowerFlat™ (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4.8W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • BDP947E6327
    GENERAL PURPOSE TRANSISTOR
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
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  • DMA561070R
    TRANS PREBIAS DUAL PNP SMINI5
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Package / Case: 5-SMD, Flat Leads
    • Supplier Device Package: SMini5-F3-B
    • Power - Max: 150mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 22kOhms
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  • MPS2907AG
    SMALL SIGNAL BIPOLAR TRANSISTOR
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 600mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 10nA (ICBO)
    • Frequency - Transition: 200MHz
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  • IRLI540GPBF
    MOSFET N-CH 100V 17A TO220FP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
    • Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 48W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
    • Vgs (Max): ±10V
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  • ZXMN10A25GTA
    MOSFET N-CH 100V 2.9A SOT223
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
    • Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 859pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FQNL1N50BBU
    N-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Series: QFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 270mA (Tc)
    • Rds On (Max) @ Id, Vgs: 9Ohm @ 135mA, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • NZT749
    TRANS PNP 25V 4A SOT223-4
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223-4
    • Power - Max: 1.2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 4A
    • Voltage - Collector Emitter Breakdown (Max): 25V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 75MHz
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  • SMP3003-DL-1EX
    MOSFET P-CH 75V 100A SMP-FD
    onsemi
    • Manufacturer: onsemi
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  • DMN3013LFG-13
    MOSFET BVDSS: 25V-30V POWERDI333
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerLDFN
    • Supplier Device Package: PowerDI3333-8 (Type D)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
    • Power - Max: 2.16W (Ta)
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  • AO7800
    MOSFET 2N-CH 20V SC70-6
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SC-70-6
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 900mA
    • Rds On (Max) @ Id, Vgs: 300mOhm @ 900mA, 4.5V
    • Vgs(th) (Max) @ Id: 900mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
    • Power - Max: 300mW
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  • APTGT50TA60PG
    IGBT MODULE 600V 80A 176W SP6P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • Configuration: Three Phase
    • Power - Max: 176W
    • Current - Collector (Ic) (Max): 80A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
    • Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
    • NTC Thermistor: No
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  • ULN2067B
    TRANS 4NPN DARL 80V 1.75A 16DIP
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: -20°C ~ 85°C (TA)
    • Package / Case: 16-PowerDIP (0.300", 7.62mm)
    • Supplier Device Package: 16-PowerDIP (20x7.10)
    • Power - Max: 1W
    • Transistor Type: 4 NPN Darlington (Quad)
    • Current - Collector (Ic) (Max): 1.75A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
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  • SP8K33TB1
    MOSFET 2N-CH 60V 8SOP
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
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  • ZVP1320ASTOA
    MOSFET P-CH 200V 0.07A TO92-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: E-Line-3
    • Supplier Device Package: E-Line (TO-92 compatible)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
    • Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 625mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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