-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
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- Manufacturer: Microsemi Corporation
- Series: POWER MOS 8™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3 Variant
- Supplier Device Package: TO-247 [B]
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1040W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 750mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 160MHz
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Series: SDMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220-3F
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs (Max): ±25V
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Rds On (Max) @ Id, Vgs: 165mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 325mW (Ta), 1.14W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Microchip Technology
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- Manufacturer: onsemi
- Series: PowerTrench®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
- Supplier Device Package: SuperSOT™-6 FLMP
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3524pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 500mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
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- Manufacturer: onsemi
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- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
- Technology: MOSFET (Metal Oxide)
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- Manufacturer: Renesas Electronics America Inc
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
- Voltage - Rated: 6V
- Current - Test: 10mA
- Transistor Type: N-Channel Dual Gate
- Gain: 21dB
- Voltage - Test: 3.5V
- Noise Figure: 1.4dB
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 350mW
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 125MHz
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- Manufacturer: Microchip Technology
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 19mOhm @ 7.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 16V
- Power - Max: 1.52W
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- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.14W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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