-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Configuration
|
Current Rating (Amps)
|
Transistor Type
|
Technology
|
Operating Temperature
|
Supplier Device Package
|
Input Type
|
FET Type
|
IGBT Type
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Power - Output
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Gain
|
Noise Figure
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Resistor - Emitter Base (R2)
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Test Condition
|
Voltage - Test
|
Current - Test
|
Current - Collector Pulsed (Icm)
|
Noise Figure (dB Typ @ f)
|
Reverse Recovery Time (trr)
|
NTC Thermistor
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Voltage - Breakdown (V(BR)GSS)
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
Current Drain (Id) - Max
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CGHV14250F | RF MOSFET HEMT 50V 440162 | Cree/Wolfspeed | 440162 | 1.2GHz ~ 1.4GHz | 125V | 42mA | HEMT | 440162 | 330W | 18dB | 50V | 500mA | GaN | |||||||||||||||||||||||||||||||||||||||||||
| PTFB183404F-V2-R0 | IC AMP RF LDMOS H-37275-6 | Cree/Wolfspeed | H-37275-6/2 | 1.88GHz | 65V | LDMOS | H-37275-6/2 | 80W | 17dB | 30V | 2.6A | |||||||||||||||||||||||||||||||||||||||||||||
| CGH21120F | 120W, GAN HEMT, 28V, 1.8-2.1GHZ, | Cree/Wolfspeed | 440162 | 1.8GHz ~ 2.3GHz | 84V | HEMT | 440162 | 120W | 15dB | 28V | 500mA | GaN | ||||||||||||||||||||||||||||||||||||||||||||
| PXAE1837078NB-V1-R0 | SI LDMOS AMP 300W 1805-1880MHZ | Cree/Wolfspeed | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CGHV96050F2 | RF MOSFET HEMT 40V 440210 | Cree/Wolfspeed | 440210 | 7.9GHz ~ 9.6GHz | 100V | 6A | HEMT | 440210 | 70W | 10dB | 40V | 500mA | GaN | |||||||||||||||||||||||||||||||||||||||||||
| PTFB193408SVV1XWSA1 | IC FET RF LDMOS H-34275G-6/2 | Infineon Technologies | H-34275G-6/2 | 1.99GHz | 65V | LDMOS (Dual), Common Source | H-34275G-6/2 | 80W | 19dB | 30V | 2.65A | |||||||||||||||||||||||||||||||||||||||||||||
| MCH6307-G-TL-E | PCH 1.8V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TF009E-AC | NCH J-FET | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPH6601-TL-E | PCH+PCH 2.5V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6608-TL-E | NCH+NCH 2.5V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ187-TD-E | PCH 4V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPH3322-TL-E | PCH 4V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFG35010R5 | RF POWER N-CHANNEL, MOSFET | Rochester Electronics, LLC | NI-360HF | 3.55GHz | 15V | pHEMT FET | NI-360HF | 10W | 10dB | 12V | 180mA | |||||||||||||||||||||||||||||||||||||||||||||
| BF1203,115 | FET RF 10V 400MHZ 6TSSOP | Rochester Electronics, LLC | 6-TSSOP, SC-88, SOT-363 | 400MHz | 10V | 30mA | N-Channel Dual Gate | 6-TSSOP | 27dB | 1dB | 5V | 15mA | ||||||||||||||||||||||||||||||||||||||||||||
| BF1108215 | SILICON RF SWITCHES | Rochester Electronics, LLC | TO-253-4, TO-253AA | 3V | 10mA | N-Channel | SOT-143B |
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