- Производитель
- Частота
-
- Номинальный ток
- Тип транзистора
- Рабочая температура
- Тип корпуса
- Выходная мощность
- Усиление по току (hFE)
- Граничная частота
- Усиление
- Коэффициент шума
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Тип транзистора
|
Рабочая температура
|
Тип корпуса
|
Выходная мощность
|
Усиление по току (hFE)
|
Граничная частота
|
Усиление
|
Коэффициент шума
|
Voltage - Test
|
Current - Test
|
Noise Figure (dB Typ @ f)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MT3S113TU,LF | RF TRANS NPN 5.3V 11.2GHZ UFM | Toshiba Semiconductor and Storage | 3-SMD, Flat Lead | 100mA | 5.3V | 900mW | Surface Mount | NPN | 150°C (TJ) | UFM | 200 @ 30mA, 5V | 11.2GHz | 12.5dB | 1.45dB @ 1GHz | |||||||
| 2SC2714-O(TE85L,F) | RF TRANS NPN 30V 550MHZ SMINI | Toshiba Semiconductor and Storage | TO-236-3, SC-59, SOT-23-3 | 20mA | 30V | 100mW | Surface Mount | NPN | 125°C (TJ) | S-Mini | 70 @ 1mA, 6V | 550MHz | 23dB | 2.5dB @ 100MHz | |||||||
| MT3S113(TE85L,F) | RF TRANS NPN 5.3V 12.5GHZ SMINI | Toshiba Semiconductor and Storage | TO-236-3, SC-59, SOT-23-3 | 100mA | 5.3V | 800mW | Surface Mount | NPN | 150°C (TJ) | S-Mini | 200 @ 30mA, 5V | 12.5GHz | 11.8dB | 1.45dB @ 1GHz | |||||||
| 2SC5108-Y,LF | RF TRANS NPN 10V 6GHZ SSM | Toshiba Semiconductor and Storage | SC-75, SOT-416 | 30mA | 10V | 100mW | Surface Mount | NPN | SSM | 120 @ 5mA, 5V | 6GHz | 11dB | |||||||||
| 2SC5095-O(TE85L,F) | RF TRANS NPN 10V 10GHZ SC70 | Toshiba Semiconductor and Storage | SC-70, SOT-323 | 15mA | 10V | 100mW | Surface Mount | NPN | 125°C (TJ) | SC-70 | 80 @ 7mA, 6V | 10GHz | 13dB ~ 7dB | 1.8dB @ 2GHz | |||||||
| 2SC5086-O,LF | RF TRANS NPN 12V 7GHZ SSM | Toshiba Semiconductor and Storage | SC-75, SOT-416 | 80mA | 12V | 100mW | Surface Mount | NPN | 125°C (TJ) | SSM | 80 @ 20mA, 10V | 7GHz | 1dB @ 500MHz | ||||||||
| 2SK209-GR(TE85L,F) | JFET N-CH SOT23 | Toshiba Semiconductor and Storage | TO-236-3, SC-59, SOT-23-3 | 1kHz | N-Channel JFET | SC-59 | 1dB | 10V | 500µA | ||||||||||||
| MT3S111(TE85L,F) | RF TRANS NPN 6V 11.5GHZ SMINI | Toshiba Semiconductor and Storage | TO-236-3, SC-59, SOT-23-3 | 100mA | 6V | 700mW | Surface Mount | NPN | 150°C (TJ) | S-Mini | 200 @ 30mA, 5V | 11.5GHz | 12dB | 1.2dB @ 1GHz | |||||||
| MT3S16U(TE85L,F) | RF TRANS NPN 5V 4GHZ USM | Toshiba Semiconductor and Storage | SC-70, SOT-323 | 60mA | 5V | 100mW | Surface Mount | NPN | 125°C (TJ) | SC-70 | 80 @ 5mA, 1V | 4GHz | 4.5dBi | 2.4dB @ 1GHz | |||||||
| 2SC5095-R(TE85L,F) | RF TRANS NPN 10V 10GHZ SC70 | Toshiba Semiconductor and Storage | SC-70, SOT-323 | 15mA | 10V | 100mW | Surface Mount | NPN | 125°C (TJ) | SC-70 | 50 @ 7mA, 6V | 10GHz | 13dB ~ 7.5dB | 1.8dB @ 2GHz | |||||||
| 2SC5096-R,LF | RF TRANS NPN 10V 10GHZ SSM | Toshiba Semiconductor and Storage | SC-75, SOT-416 | 15mA | 10V | 100mW | Surface Mount | NPN | 125°C (TJ) | SSM | 50 @ 7mA, 6V | 10GHz | 1.4dB | 1.4dB @ 1GHz | |||||||
| 2SK209-Y(TE85L,F) | JFET N-CH SOT23 | Toshiba Semiconductor and Storage | TO-236-3, SC-59, SOT-23-3 | 1kHz | N-Channel JFET | SC-59 | 1dB | 10V | 500µA | ||||||||||||
| 2SC5084YTE85LF | RF TRANS NPN 12V 7GHZ SC59 | Toshiba Semiconductor and Storage | TO-236-3, SC-59, SOT-23-3 | 80mA | 12V | 150mW | Surface Mount | NPN | 125°C (TJ) | SC-59 | 120 @ 20mA, 10V | 7GHz | 11dB | 1.1dB @ 1GHz | |||||||
| 2SC4915-Y,LF | RF TRANS NPN 30V 550MHZ SSM | Toshiba Semiconductor and Storage | SC-75, SOT-416 | 20mA | 30V | 100mW | Surface Mount | NPN | 125°C (TJ) | SSM | 100 @ 1mA, 6V | 550MHz | 17dB ~ 23dB | 2.3dB ~ 5dB @ 100MHz | |||||||
| 2SC4215-O(TE85L,F) | RF TRANS NPN 30V 550MHZ USM | Toshiba Semiconductor and Storage | SC-70, SOT-323 | 20mA | 30V | 100mW | Surface Mount | NPN | 125°C (TJ) | SC-70 | 40 @ 1mA, 6V | 550MHz | 23dB | 5dB @ 100MHz |
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