• Manufacturer
  • Frequency
    • Current Rating (Amps)
    • Transistor Type
    • Operating Temperature
    • Supplier Device Package
    • Power - Output
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Voltage - Test
    • Current - Test
    • Noise Figure (dB Typ @ f)
    • Series
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List Table
Found: 44
  • 2SC2714-O(TE85L,F)
    RF TRANS NPN 30V 550MHZ SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
    • Frequency - Transition: 550MHz
    • Gain: 23dB
    • Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
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  • MT3S113(TE85L,F)
    RF TRANS NPN 5.3V 12.5GHZ SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 800mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 5.3V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
    • Frequency - Transition: 12.5GHz
    • Gain: 11.8dB
    • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
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  • 2SC5108-Y,LF
    RF TRANS NPN 10V 6GHZ SSM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SSM
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 30mA
    • Voltage - Collector Emitter Breakdown (Max): 10V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
    • Frequency - Transition: 6GHz
    • Gain: 11dB
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  • 2SC5095-O(TE85L,F)
    RF TRANS NPN 10V 10GHZ SC70
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15mA
    • Voltage - Collector Emitter Breakdown (Max): 10V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
    • Frequency - Transition: 10GHz
    • Gain: 13dB ~ 7dB
    • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
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  • 2SC5086-O,LF
    RF TRANS NPN 12V 7GHZ SSM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SSM
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Noise Figure (dB Typ @ f): 1dB @ 500MHz
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  • MT3S111(TE85L,F)
    RF TRANS NPN 6V 11.5GHZ SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 700mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 6V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
    • Frequency - Transition: 11.5GHz
    • Gain: 12dB
    • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
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  • MT3S16U(TE85L,F)
    RF TRANS NPN 5V 4GHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 60mA
    • Voltage - Collector Emitter Breakdown (Max): 5V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
    • Frequency - Transition: 4GHz
    • Gain: 4.5dBi
    • Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
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  • 2SC5095-R(TE85L,F)
    RF TRANS NPN 10V 10GHZ SC70
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15mA
    • Voltage - Collector Emitter Breakdown (Max): 10V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
    • Frequency - Transition: 10GHz
    • Gain: 13dB ~ 7.5dB
    • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
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  • 2SC5096-R,LF
    RF TRANS NPN 10V 10GHZ SSM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SSM
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15mA
    • Voltage - Collector Emitter Breakdown (Max): 10V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
    • Frequency - Transition: 10GHz
    • Gain: 1.4dB
    • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
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  • 2SC5084YTE85LF
    RF TRANS NPN 12V 7GHZ SC59
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SC-59
    • Power - Max: 150mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Gain: 11dB
    • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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  • 2SC4915-Y,LF
    RF TRANS NPN 30V 550MHZ SSM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SSM
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
    • Frequency - Transition: 550MHz
    • Gain: 17dB ~ 23dB
    • Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
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  • 2SC4215-O(TE85L,F)
    RF TRANS NPN 30V 550MHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
    • Frequency - Transition: 550MHz
    • Gain: 23dB
    • Noise Figure (dB Typ @ f): 5dB @ 100MHz
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  • 2SC5065-O(TE85L,F)
    RF TRANS NPN 12V 7GHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 30mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Frequency - Transition: 7GHz
    • Noise Figure (dB Typ @ f): 1dB @ 500MHz
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  • MT3S20P(TE12L,F)
    RF TRANS NPN 12V 7GHZ PW-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: PW-MINI
    • Power - Max: 1.8W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Frequency - Transition: 7GHz
    • Gain: 16.5dB
    • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
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  • MT3S113P(TE12L,F)
    RF TRANS NPN 5.3V 7.7GHZ PW-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: PW-MINI
    • Power - Max: 1.6W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 5.3V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
    • Frequency - Transition: 7.7GHz
    • Gain: 10.5dB
    • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
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