• Manufacturer
  • Frequency
    • Current Rating (Amps)
    • Transistor Type
    • Operating Temperature
    • Supplier Device Package
    • Power - Output
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Voltage - Test
    • Current - Test
    • Noise Figure (dB Typ @ f)
    • Series
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List Table
Found: 44
  • 2SC5088-O(TE85L,F)
    RF TRANS NPN 12V 7GHZ USQ
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-82A, SOT-343
    • Supplier Device Package: USQ
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Gain: 18dB
    • Noise Figure (dB Typ @ f): 1dB @ 500MHz
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  • 2SC5087YTE85LF
    RF TRANS NPN 12V 7GHZ SMQ
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-61AA
    • Supplier Device Package: SMQ
    • Power - Max: 150mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Gain: 13dB
    • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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  • 2SC5087R(TE85L,F)
    RF TRANS NPN 12V 8GHZ SMQ
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-61AA
    • Supplier Device Package: SMQ
    • Power - Max: 150mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
    • Frequency - Transition: 8GHz
    • Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
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  • 2SC5085-Y(TE85L,F)
    RF TRANS NPN 12V 7GHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Gain: 11dB ~ 16.5dB
    • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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  • 2SC4215-Y(TE85L,F)
    RF TRANS NPN 30V 550MHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
    • Frequency - Transition: 550MHz
    • Gain: 17dB ~ 23dB
    • Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
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  • 2SC5065-Y(TE85L,F)
    RF TRANS NPN 12V 7GHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 30mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
    • Frequency - Transition: 7GHz
    • Gain: 12dB ~ 17dB
    • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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  • 2SC5066-Y,LF
    RF TRANS NPN 12V 7GHZ SSM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SSM
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 30mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
    • Frequency - Transition: 7GHz
    • Noise Figure (dB Typ @ f): 1dB @ 500MHz
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  • 2SC5087-O(TE85L,F)
    RF TRANS NPN 12V 7GHZ SMQ
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-61AA
    • Supplier Device Package: SMQ
    • Power - Max: 150mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz
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  • 2SC4915-O,LF
    RF TRANS NPN 30V 550MHZ SSM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SSM
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
    • Frequency - Transition: 550MHz
    • Gain: 17dB ~ 23dB
    • Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
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  • 2SC2714-Y(TE85L,F)
    RF TRANS NPN 30V 550MHZ SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
    • Frequency - Transition: 550MHz
    • Gain: 23dB
    • Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
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  • 2SC5084-O(TE85L,F)
    RF TRANS NPN 12V 7GHZ SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 150mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Gain: 11dB
    • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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  • MT3S111P(TE12L,F)
    RF TRANS NPN 6V 8GHZ PW-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: PW-MINI
    • Power - Max: 1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 6V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
    • Frequency - Transition: 8GHz
    • Gain: 10.5dB
    • Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
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  • 2SK3074TE12LF
    MOSF RF N CH 30V 1A PW-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Package / Case: TO-243AA
    • Supplier Device Package: SC-62
    • Frequency: 520MHz
    • Voltage - Rated: 30V
    • Current - Test: 50mA
    • Power - Output: 630mW
    • Transistor Type: N-Channel
    • Gain: 14.9dB
    • Voltage - Test: 9.6V
    • Current Rating (Amps): 1A
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  • MT3S111TU,LF
    RF SIGE NPN BIPOLAR TRANSISTOR N
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-SMD, Flat Lead
    • Supplier Device Package: UFM
    • Power - Max: 800mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 6V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
    • Frequency - Transition: 10GHz
    • Gain: 12.5dB
    • Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
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  • HN3C10FUTE85LF
    RF TRANS 2 NPN 12V 7GHZ US6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: US6
    • Power - Max: 200mW
    • Transistor Type: 2 NPN (Dual)
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Gain: 11.5dB
    • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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