• Производитель
  • Частота
    • Номинальный ток
    • Тип транзистора
    • Рабочая температура
    • Тип корпуса
    • Выходная мощность
    • Усиление по току (hFE)
    • Граничная частота
    • Усиление
    • Коэффициент шума
    • Voltage - Test
    • Current - Test
    • Noise Figure (dB Typ @ f)
    • Серия
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Списком Таблицей
Найдено: 44
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Частота
Номинальное напряжение
Номинальный ток
Тип транзистора
Рабочая температура
Тип корпуса
Выходная мощность
Усиление по току (hFE)
Граничная частота
Усиление
Коэффициент шума
Voltage - Test
Current - Test
Noise Figure (dB Typ @ f)
2SC5088-O(TE85L,F) RF TRANS NPN 12V 7GHZ USQ Toshiba Semiconductor and Storage SC-82A, SOT-343 80mA 12V 100mW Surface Mount NPN 125°C (TJ) USQ 80 @ 20mA, 10V 7GHz 18dB 1dB @ 500MHz
2SC5087YTE85LF RF TRANS NPN 12V 7GHZ SMQ Toshiba Semiconductor and Storage SC-61AA 80mA 12V 150mW Surface Mount NPN 125°C (TJ) SMQ 120 @ 20mA, 10V 7GHz 13dB 1.1dB @ 1GHz
2SC5087R(TE85L,F) RF TRANS NPN 12V 8GHZ SMQ Toshiba Semiconductor and Storage SC-61AA 80mA 12V 150mW Surface Mount NPN 125°C (TJ) SMQ 120 @ 20mA, 10V 8GHz 1.1dB ~ 2dB @ 1GHz
2SC5085-Y(TE85L,F) RF TRANS NPN 12V 7GHZ USM Toshiba Semiconductor and Storage SC-70, SOT-323 80mA 12V 100mW Surface Mount NPN 125°C (TJ) SC-70 120 @ 20mA, 10V 7GHz 11dB ~ 16.5dB 1.1dB @ 1GHz
2SC4215-Y(TE85L,F) RF TRANS NPN 30V 550MHZ USM Toshiba Semiconductor and Storage SC-70, SOT-323 20mA 30V 100mW Surface Mount NPN 125°C (TJ) SC-70 100 @ 1mA, 6V 550MHz 17dB ~ 23dB 2dB ~ 5dB @ 100MHz
2SC5065-Y(TE85L,F) RF TRANS NPN 12V 7GHZ USM Toshiba Semiconductor and Storage SC-70, SOT-323 30mA 12V 100mW Surface Mount NPN 125°C (TJ) SC-70 120 @ 10mA, 5V 7GHz 12dB ~ 17dB 1.1dB @ 1GHz
2SC5066-Y,LF RF TRANS NPN 12V 7GHZ SSM Toshiba Semiconductor and Storage SC-75, SOT-416 30mA 12V 100mW Surface Mount NPN 125°C (TJ) SSM 120 @ 10mA, 5V 7GHz 1dB @ 500MHz
2SC5087-O(TE85L,F) RF TRANS NPN 12V 7GHZ SMQ Toshiba Semiconductor and Storage SC-61AA 80mA 12V 150mW Surface Mount NPN 125°C (TJ) SMQ 80 @ 20mA, 10V 7GHz 1dB ~ 1.1dB @ 500MHz ~ 1GHz
2SC4915-O,LF RF TRANS NPN 30V 550MHZ SSM Toshiba Semiconductor and Storage SC-75, SOT-416 20mA 30V 100mW Surface Mount NPN 125°C (TJ) SSM 70 @ 1mA, 6V 550MHz 17dB ~ 23dB 2.3dB ~ 5dB @ 100MHz
2SC2714-Y(TE85L,F) RF TRANS NPN 30V 550MHZ SMINI Toshiba Semiconductor and Storage TO-236-3, SC-59, SOT-23-3 20mA 30V 100mW Surface Mount NPN 125°C (TJ) S-Mini 100 @ 1mA, 6V 550MHz 23dB 2.5dB @ 100MHz
2SC5084-O(TE85L,F) RF TRANS NPN 12V 7GHZ SMINI Toshiba Semiconductor and Storage TO-236-3, SC-59, SOT-23-3 80mA 12V 150mW Surface Mount NPN 125°C (TJ) S-Mini 80 @ 20mA, 10V 7GHz 11dB 1.1dB @ 1GHz
MT3S111P(TE12L,F) RF TRANS NPN 6V 8GHZ PW-MINI Toshiba Semiconductor and Storage TO-243AA 100mA 6V 1W Surface Mount NPN 150°C (TJ) PW-MINI 200 @ 30mA, 5V 8GHz 10.5dB 1.25dB @ 1GHz
2SK3074TE12LF MOSF RF N CH 30V 1A PW-MINI Toshiba Semiconductor and Storage TO-243AA 520MHz 30V 1A N-Channel SC-62 630mW 14.9dB 9.6V 50mA
MT3S111TU,LF RF SIGE NPN BIPOLAR TRANSISTOR N Toshiba Semiconductor and Storage 3-SMD, Flat Lead 100mA 6V 800mW Surface Mount NPN 150°C (TJ) UFM 200 @ 30mA, 5V 10GHz 12.5dB 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
HN3C10FUTE85LF RF TRANS 2 NPN 12V 7GHZ US6 Toshiba Semiconductor and Storage 6-TSSOP, SC-88, SOT-363 80mA 12V 200mW Surface Mount 2 NPN (Dual) US6 80 @ 20mA, 10V 7GHz 11.5dB 1.1dB @ 1GHz
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