• Manufacturer: Panasonic Electronic Components
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SMINI6-G1
• Power - Max: 150mW
• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100µA
• Frequency - Transition: 150MHz

• Manufacturer: onsemi
• Series: SuperFET™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 50W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V

• Manufacturer: IXYS
• Series: GenX3™, XPT™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)
• Reverse Recovery Time (trr): 195ns
• Power - Max: 230W
• Input Type: Standard
• Current - Collector (Ic) (Max): 36A
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Test Condition: 600V, 20A, 10Ohm, 15V
• Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector Pulsed (Icm): 88A
• Switching Energy: 1.3mJ (on), 500µJ (off)
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 20ns/90ns

• Manufacturer: Cree/Wolfspeed
• Package / Case: HBSOF-4-1
• Supplier Device Package: PG-HBSOF-4-1
• Frequency: 869MHz ~ 960MHz
• Voltage - Rated: 105V
• Current - Test: 900mA
• Power - Output: 240W
• Transistor Type: LDMOS
• Gain: 22.5dB
• Voltage - Test: 48V
• Current Rating (Amps): 10µA

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)
• Power - Max: 246mW
• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Resistor - Base (R1): 2.2kOhms
• Resistor - Emitter Base (R2): 2.2kOhms

• Manufacturer: NTE Electronics, Inc

• Manufacturer: Vishay Siliconix
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: 4-DIP, Hexdip, HVMDIP
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
• Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: NXP USA Inc.
• Series: TrenchMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1074pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 93W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Vishay Siliconix
• Series: TrenchFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
• Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/355
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6
• Power - Max: 350mW
• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-WDFN (2x2)
• Power - Max: 2.27W
• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 155MHz

• Manufacturer: Rochester Electronics, LLC
• Series: CoolMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 730µA
• Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1.62pF @ 100V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 151W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Vishay Siliconix
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 125W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB
• Power - Max: 250mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• Frequency - Transition: 250MHz

• Manufacturer: Infineon Technologies
• Series: CoolMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
• Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
• Vgs(th) (Max) @ Id: 5.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.8W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V