- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Power - Max
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
-
- Manufacturer: Linear Integrated Systems, Inc.
- Series: LSK389
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-71-6 Metal Can
- Supplier Device Package: TO-71
- FET Type: 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
- Power - Max: 400mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 300 mV @ 1 µA
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- Manufacturer: NTE Electronics, Inc
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- Manufacturer: Microsemi Corporation
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: SST4416
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 135°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 0.8pF @ 15V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 30V
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Power - Max: 100mW
- Voltage - Breakdown (V(BR)GSS): 50V
- Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
- Current Drain (Id) - Max: 6.5 mA
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
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- Manufacturer: Microchip Technology
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- Manufacturer: Microchip Technology
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- Manufacturer: onsemi
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- Manufacturer: Vishay Dale
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236 (SOT-23)
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-72
- Supplier Device Package: 3-SPA
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 15V
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Power - Max: 300mW
- Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V (VGS)
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
- Resistance - RDS(On): 50 Ohms
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: P-Channel
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
- Resistance - RDS(On): 300 Ohms
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- Manufacturer: Linear Integrated Systems, Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 135°C (TJ)
- Package / Case: 8-VFDFN Exposed Pad
- Supplier Device Package: 8-DFN (2x2)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 6V @ 1µA
- Resistance - RDS(On): 38 Ohms
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-206AC, TO-52-3 Metal Can
- Supplier Device Package: TO-206AC (TO-52)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
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- 10
- 15
- 50
- 100