Semiconductors, Transistors, Transistors - JFETs max power 400mW

    • FET Type
    • Drain to Source Voltage (Vdss)
    • Input Capacitance (Ciss) (Max) @ Vds
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Series
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List Table
Found: 27
  • CPH3910-TL-E
    JFET N-CH 25V 50MA 3CPH
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: 3-CPH
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 25V
    • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 5V
    • Current Drain (Id) - Max: 50 mA
    • Voltage - Cutoff (VGS off) @ Id: 1.8V @ 100µA
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  • J111,126
    JFET N-CH 40V 400MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
    • Resistance - RDS(On): 30 Ohms
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  • J111,126
    JFET N-CH 40V 400MW TO92-3
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
    • Resistance - RDS(On): 30 Ohms
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  • LSK170A TO-92 3L
    LOW NOISE & CAPACITANCE, HIGH IN
    Linear Integrated Systems, Inc.
    • Manufacturer: Linear Integrated Systems, Inc.
    • Series: LSK170A
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 135°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 15V
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
    • Current Drain (Id) - Max: 10 mA
    • Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 nA
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  • J177,126
    JFET P-CH 30V 400MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
    • Resistance - RDS(On): 300 Ohms
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  • LSK389B TO-71 6L
    LOW NOISE, MONOLITHIC DUAL, N-CH
    Linear Integrated Systems, Inc.
    • Manufacturer: Linear Integrated Systems, Inc.
    • Series: LSK389
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-71-6 Metal Can
    • Supplier Device Package: TO-71
    • FET Type: 2 N-Channel (Dual)
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
    • Current Drain (Id) - Max: 10 mA
    • Voltage - Cutoff (VGS off) @ Id: 300 mV @ 1 µA
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  • J113,126
    JFET N-CH 40V 400MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
    • Resistance - RDS(On): 100 Ohms
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  • LS844 SOT-23 6L
    LOW NOISE, LOW DRIFT, LOW CAPACI
    Linear Integrated Systems, Inc.
    • Manufacturer: Linear Integrated Systems, Inc.
    • Series: LS844
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • FET Type: 2 N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 60 V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
    • Current Drain (Id) - Max: 50 mA
    • Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
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  • J174,126
    JFET P-CH 30V 400MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
    • Resistance - RDS(On): 85 Ohms
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  • J175,116
    JFET P-CH 30V 0.4W TO92
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
    • Resistance - RDS(On): 125 Ohms
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  • LS844 SOIC 8L
    LOW NOISE, LOW DRIFT, LOW CAPACI
    Linear Integrated Systems, Inc.
    • Manufacturer: Linear Integrated Systems, Inc.
    • Series: LS844
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 60 V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
    • Current Drain (Id) - Max: 50 mA
    • Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
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  • LSK170B SOT-23 3L
    LOW NOISE & CAPACITANCE, HIGH IN
    Linear Integrated Systems, Inc.
    • Manufacturer: Linear Integrated Systems, Inc.
    • Series: LSK170B
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 135°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 15V
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
    • Current Drain (Id) - Max: 10 mA
    • Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 nA
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  • J176,126
    JFET P-CH 30V 400MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
    • Resistance - RDS(On): 250 Ohms
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  • J109,126
    JFET N-CH 25V 0.4W SOT54
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 25V
    • Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 2V @ 1µA
    • Resistance - RDS(On): 12 Ohms
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  • J108,126
    JFET N-CH 25V 0.4W SOT54
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
    • Power - Max: 400mW
    • Voltage - Breakdown (V(BR)GSS): 25V
    • Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 5V
    • Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
    • Resistance - RDS(On): 8 Ohms
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