Semiconductors, Transistors, Transistors - JFETs max power 325mW
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- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 50V
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
- Power - Max: 325mW
- Voltage - Breakdown (V(BR)GSS): 50V
- Current - Drain (Idss) @ Vds (Vgs=0): 3mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 2V @ 100nA
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