Semiconductors, Transistors, Transistors - JFETs max power 360mW
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- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
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- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/385
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
- Resistance - RDS(On): 40 Ohms
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 10V (VGS)
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
- Current Drain (Id) - Max: 250 pA
- Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
- Resistance - RDS(On): 25 Ohms
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/385
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
- Resistance - RDS(On): 25 Ohms
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- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-UB (3.09x2.45)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
- Resistance - RDS(On): 30 Ohms
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-
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-UB (3.09x2.45)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
- Resistance - RDS(On): 50 Ohms
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/385
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
- Resistance - RDS(On): 60 Ohms
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/385
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
- Resistance - RDS(On): 25 Ohms
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: J212
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: J210
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
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- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-UB (3.09x2.45)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
- Resistance - RDS(On): 80 Ohms
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: J211
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
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- Manufacturer: Microsemi Corporation
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
- Resistance - RDS(On): 40 Ohms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microsemi Corporation
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-UB (3.09x2.45)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
- Resistance - RDS(On): 60 Ohms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/385
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
- Resistance - RDS(On): 40 Ohms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/385
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
- Resistance - RDS(On): 60 Ohms
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
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- 15
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- 100