Semiconductors, Transistors, Transistors - JFETs max power 300mW

Found: 74
  • SMALL SIGNAL P-CHANNEL MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23 (TO-236AB)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
    • Resistance - RDS(On): 250 Ohms
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  • JFET N-CH 50MA 300MW SPA
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-72
    • Supplier Device Package: 3-SPA
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
    • Power - Max: 300mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V
    • Current Drain (Id) - Max: 50 mA
    • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
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  • MOSFET N-CH 35V 5MA TO-206AF
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -50°C ~ 150°C (TJ)
    • Package / Case: TO-206AF, TO-72-4 Metal Can
    • Supplier Device Package: TO-206AF (TO-72)
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 35V
    • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
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  • N CHANNEL JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/375
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 200°C (TJ)
    • Package / Case: TO-206AF, TO-72-4 Metal Can
    • Supplier Device Package: TO-72
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 8V @ 500pA
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  • N CHANNEL JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/375
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 200°C (TJ)
    • Package / Case: TO-206AF, TO-72-4 Metal Can
    • Supplier Device Package: TO-72
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 50V
    • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 2.5mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
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  • MOSFET N-CH 40V 200UA TO-206AF
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-206AF, TO-72-4 Metal Can
    • Supplier Device Package: TO-206AF (TO-72)
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
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  • SMALL SIGNAL FET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-72
    • Supplier Device Package: 3-SPA
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
    • Power - Max: 300mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V
    • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
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  • ULTRA HIGH INPUT IMPEDANCE N-CHA
    Linear Integrated Systems, Inc.
    • Manufacturer: Linear Integrated Systems, Inc.
    • Series: SST4117
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 40V
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  • JFET N-CH 25V 0.3W TO-52
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-206AC, TO-52-3 Metal Can
    • Supplier Device Package: TO-206AC (TO-52)
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 25V
    • Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
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  • WIDEBAND, HIGH GAIN, SINGLE, N-
    Linear Integrated Systems, Inc.
    • Manufacturer: Linear Integrated Systems, Inc.
    • Series: SST4416
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 135°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 0.8pF @ 15V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 30V
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  • SMALL SIGNAL FET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-72
    • Supplier Device Package: 3-SPA
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
    • Power - Max: 300mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V
    • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
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  • JFET N-CH 25V 0.3W TO-52
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-206AC, TO-52-3 Metal Can
    • Supplier Device Package: TO-206AC (TO-52)
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 25V
    • Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
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  • JFET N-CH 50MA 300MW SPA
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-72
    • Supplier Device Package: 3-SPA
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
    • Power - Max: 300mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 14.5mA @ 5V
    • Current Drain (Id) - Max: 50 mA
    • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
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  • WIDEBAND, HIGH GAIN, SINGLE, N-
    Linear Integrated Systems, Inc.
    • Manufacturer: Linear Integrated Systems, Inc.
    • Series: PN4416
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 135°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 0.8pF @ 15V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 30V
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  • JFETS
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 5V
    • Voltage - Cutoff (VGS off) @ Id: 750mV @ 1A
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