- Power - Max
- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
- Resistance - RDS(On): 30 Ohms
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-206AF (TO-72)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/295
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
- FET Type: P-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
- Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-206AF (TO-72)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 30µA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 1nA
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-206AF (TO-72)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
- FET Type: 2 N-Channel (Dual)
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Power - Max: 300mW
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -50°C ~ 150°C (TJ)
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-206AF (TO-72)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -50°C ~ 150°C (TJ)
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-206AF (TO-72)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
- Resistance - RDS(On): 50 Ohms
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 35V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 50V
- Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
- FET Type: 2 N-Channel (Dual)
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Power - Max: 300mW
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
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-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
- Resistance - RDS(On): 100 Ohms
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- Manufacturer: Microsemi Corporation
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: 4-SMD
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 35V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-72
- Supplier Device Package: 3-SPA
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 15V
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Power - Max: 300mW
- Current - Drain (Idss) @ Vds (Vgs=0): 14.5mA @ 5V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
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- Offers in stock:
- 10
- 15
- 50
- 100