Semiconductors, Transistors, Transistors - JFETs max power 190mW
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- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
- FET Type: 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Power - Max: 190mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1µA
- Resistance - RDS(On): 50 Ohms
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