• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 407
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Power - Output
Mounting Type
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
PTVA092407NF-V1-R5 IC RF LDMOS FET 4HBSOF Cree/Wolfspeed PG-HBSOF-4-1 240W 869MHz ~ 960MHz 105V 10µA HBSOF-4-1 LDMOS 22.5dB 48V 900mA
PTRA082808NF-V1-R5 RF LDMOS FET 280W, 790 - 820MHZ Cree/Wolfspeed PG-HBSOF-6-2 280W 790MHz ~ 820MHz 105V 10µA HBSOF-6-2 LDMOS (Dual), Common Source 15.5dB 48V 200mA
C2M0045170P ZFET SIC DMOSFET, 1700V VDS, RDS Cree/Wolfspeed TO-247-4 Through Hole TO-247-4 SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) N-Channel 520W (Tc) 1700V 72A (Tc) 59mOhm @ 50A, 20V 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1000V +25V, -10V C2M™
CGHV31500F RF MOSFET HEMT 50V 440217 Cree/Wolfspeed 440217 500W 2.7GHz ~ 3.1GHz 125V 24A 440217 HEMT 13.5dB 50V 500mA GaN
CGHV14250P 250W, GAN HEMT, 50V, 0.5-1.8GHZ, Cree/Wolfspeed 440161 250W 1.2GHz ~ 1.4GHz 150V 440161 HEMT 17.8dB 50V 500mA GaN
PTFB090901EA-V2-R0 IC AMP RF LDMOS H-36265-2 Cree/Wolfspeed H-36265-2 25W 960MHz 65V H-36265-2 LDMOS 19.5dB 28V 650mA
C2M0080120D MOSFET N-CH 1200V 31.6A TO247 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 192W (Tc) 1200V 36A (Tc) 98mOhm @ 20A, 20V 20V 4V @ 5mA 62nC @ 5V 950pF @ 1000V +25V, -10V C2M™
C2M1000170J-TR MOSFET N-CH 1700V 5.3A TO247 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 78W (Tc) 1700V 5.3A (Tc) 1.4Ohm @ 2A, 20V 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V +25V, -10V C2M™
PXAD214218FV-V1-R0 IC AMP RF LDMOS H-37275G-6 Cree/Wolfspeed H-37275G-6/2 290W 2.11GHz ~ 2.17GHz 65V 10µA H-37275G-6/2 LDMOS 13.5dB 28V 720mA
C2M0280120D MOSFET N-CH 1200V 10A TO-247-3 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 62.5W (Tc) 1200V 10A (Tc) 370mOhm @ 6A, 20V 20V 2.8V @ 1.25mA (Typ) 20.4nC @ 20V 259pF @ 1000V +25V, -10V Z-FET™
PXAC241702FC-V1-R0 IC AMP RF LDMOS H-37248-4 Cree/Wolfspeed H-37248-4 28W 2.4GHz 65V H-37248-4 LDMOS 16.5dB 28V 360mA
PTFC210202FC-V1-R250 IC AMP RF LDMOS Cree/Wolfspeed H-37248-4 5W 2.2GHz 65V H-37248-4 LDMOS (Dual) 21dB 28V 170mA
CGH60060D-GP4 RF MOSFET HEMT 28V DIE Cree/Wolfspeed Die 60W 6GHz 84V Die HEMT 13dB 28V 400mA GaN
PXAC180602MD-V1-R500 IC AMP RF LDMOS Cree/Wolfspeed
CGHV96050F1 RF MOSFET HEMT 40V 440210 Cree/Wolfspeed 440210 32W 7.9GHz ~ 9.6GHz 100V 13A 440210 HEMT 17dB 40V 500mA GaN
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