- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Cree/Wolfspeed
- Package / Case: HBSOF-4-1
- Supplier Device Package: PG-HBSOF-4-1
- Frequency: 869MHz ~ 960MHz
- Voltage - Rated: 105V
- Current - Test: 900mA
- Power - Output: 240W
- Transistor Type: LDMOS
- Gain: 22.5dB
- Voltage - Test: 48V
- Current Rating (Amps): 10µA
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- Manufacturer: Cree/Wolfspeed
- Package / Case: HBSOF-6-2
- Supplier Device Package: PG-HBSOF-6-2
- Frequency: 790MHz ~ 820MHz
- Voltage - Rated: 105V
- Current - Test: 200mA
- Power - Output: 280W
- Transistor Type: LDMOS (Dual), Common Source
- Gain: 15.5dB
- Voltage - Test: 48V
- Current Rating (Amps): 10µA
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- Manufacturer: Cree/Wolfspeed
- Series: C2M™
- Mounting Type: Through Hole
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1700V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Rds On (Max) @ Id, Vgs: 59mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4V @ 18mA
- Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 520W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs (Max): +25V, -10V
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440217
- Supplier Device Package: 440217
- Frequency: 2.7GHz ~ 3.1GHz
- Voltage - Rated: 125V
- Current - Test: 500mA
- Power - Output: 500W
- Transistor Type: HEMT
- Gain: 13.5dB
- Voltage - Test: 50V
- Current Rating (Amps): 24A
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440161
- Supplier Device Package: 440161
- Frequency: 1.2GHz ~ 1.4GHz
- Voltage - Rated: 150V
- Current - Test: 500mA
- Power - Output: 250W
- Transistor Type: HEMT
- Gain: 17.8dB
- Voltage - Test: 50V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-36265-2
- Supplier Device Package: H-36265-2
- Frequency: 960MHz
- Voltage - Rated: 65V
- Current - Test: 650mA
- Power - Output: 25W
- Transistor Type: LDMOS
- Gain: 19.5dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
- Series: C2M™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 192W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs (Max): +25V, -10V
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- Manufacturer: Cree/Wolfspeed
- Series: C2M™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Supplier Device Package: D2PAK-7
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1700V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 78W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs (Max): +25V, -10V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37275G-6/2
- Supplier Device Package: H-37275G-6/2
- Frequency: 2.11GHz ~ 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 720mA
- Power - Output: 290W
- Transistor Type: LDMOS
- Gain: 13.5dB
- Voltage - Test: 28V
- Current Rating (Amps): 10µA
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- Manufacturer: Cree/Wolfspeed
- Series: Z-FET™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Rds On (Max) @ Id, Vgs: 370mOhm @ 6A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 62.5W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs (Max): +25V, -10V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
- Frequency: 2.4GHz
- Voltage - Rated: 65V
- Current - Test: 360mA
- Power - Output: 28W
- Transistor Type: LDMOS
- Gain: 16.5dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
- Frequency: 2.2GHz
- Voltage - Rated: 65V
- Current - Test: 170mA
- Power - Output: 5W
- Transistor Type: LDMOS (Dual)
- Gain: 21dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: Die
- Supplier Device Package: Die
- Frequency: 6GHz
- Voltage - Rated: 84V
- Current - Test: 400mA
- Power - Output: 60W
- Transistor Type: HEMT
- Gain: 13dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440210
- Supplier Device Package: 440210
- Frequency: 7.9GHz ~ 9.6GHz
- Voltage - Rated: 100V
- Current - Test: 500mA
- Power - Output: 32W
- Transistor Type: HEMT
- Gain: 17dB
- Voltage - Test: 40V
- Current Rating (Amps): 13A
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- 10
- 15
- 50
- 100