• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
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    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 407
  • C2M0045170P
    ZFET SIC DMOSFET, 1700V VDS, RDS
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C2M™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-247-4
    • Supplier Device Package: TO-247-4
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
    • Rds On (Max) @ Id, Vgs: 59mOhm @ 50A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 18mA
    • Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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  • C2M0080120D
    MOSFET N-CH 1200V 31.6A TO247
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C2M™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
    • Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 192W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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  • C2M1000170J-TR
    MOSFET N-CH 1700V 5.3A TO247
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C2M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
    • Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 78W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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  • C2M0280120D
    MOSFET N-CH 1200V 10A TO-247-3
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-FET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
    • Rds On (Max) @ Id, Vgs: 370mOhm @ 6A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 62.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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  • C3M0120090D
    900V, 120 MOHM, G3 SIC MOSFET
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
    • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 97W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • C3M0030090K
    ZFET 900V, 30 MOHM, G3 SIC MOSFE
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-4
    • Supplier Device Package: TO-247-4
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
    • Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 11mA
    • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 1864pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 149W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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  • C2M0080170P
    ZFET SIC DMOSFET, 1700V VDS, RDS
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C2M™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-4
    • Supplier Device Package: TO-247-4
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 125mOhm @ 28A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 277W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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  • C3M0075120K
    MOSFET N-CH 1200V 30A TO247-4
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-4
    • Supplier Device Package: TO-247-4L
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 4V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113.6W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +19V, -8V
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  • CAB400M12XM3
    MOSFET 2 N-CH 1200V MODULE
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
    • Vgs(th) (Max) @ Id: 3.6V @ 92mA
    • Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
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  • CAB450M12XM3
    1.2KV 450A SIC HALF BRIDGE MOD
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 450A
    • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
    • Vgs(th) (Max) @ Id: 3.6V @ 132mA
    • Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
    • Power - Max: 850W
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  • C3M0032120K
    MOSFET N-CH SIC 1200V 100A
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-4
    • Supplier Device Package: TO-247-4L
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
    • Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
    • Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 3357pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 283W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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  • E3M0120090D
    E-SERIES 900V, 120 MOHM, G3 SIC
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Automotive, AEC-Q101, E
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
    • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 97W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • CPMF-1200-S160B
    MOSFET N-CHANNEL 1200V 28A DIE
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-FET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
    • Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 202W (Tj)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -5V
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  • CPMF-1200-S080B
    MOSFET N-CHANNEL 1200V 50A DIE
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-FET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 313mW (Tj)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -5V
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  • C3M0075120J-TR
    1200V, 75 MOHM, G3 SIC MOSFET ON
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: TO-263-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 4V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113.6W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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