Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Cree/Wolfspeed D2PAK-7

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 10
  • C2M1000170J-TR
    MOSFET N-CH 1700V 5.3A TO247
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C2M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
    • Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 78W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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  • C3M0065100J
    MOSFET N-CH 1000V 35A D2PAK-7
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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  • C3M0280090J-TR
    MOSFET N-CH 900V 11A
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
    • Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
    • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • C3M0065090J-TR
    MOSFET N-CH 900V 35A D2PAK-7
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 2.1V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +19V, -8V
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  • C3M0065090J
    MOSFET N-CH 900V 35A D2PAK-7
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 2.1V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +19V, -8V
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  • C3M0120090J
    MOSFET N-CH 900V 22A
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • C3M0075120J
    MOSFET N-CH 1200V 30A D2PAK-7
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 4V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113.6W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +19V, -8V
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  • C3M0120090J-TR
    MOSFET N-CH 900V 22A
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • C3M0120100J
    MOSFET N-CH 1000V 22A D2PAK-7
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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  • C3M0280090J
    MOSFET N-CH 900V 11A
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
    • Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
    • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • 10
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