• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 10
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
C2M1000170J-TR MOSFET N-CH 1700V 5.3A TO247 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 78W (Tc) 1700V 5.3A (Tc) 1.4Ohm @ 2A, 20V 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V +25V, -10V C2M™
C3M0065100J MOSFET N-CH 1000V 35A D2PAK-7 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113.5W (Tc) 1000V 35A (Tc) 78mOhm @ 20A, 15V 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V +15V, -4V C3M™
C3M0280090J-TR MOSFET N-CH 900V 11A Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 50W (Tc) 900V 11A (Tc) 360mOhm @ 7.5A, 15V 15V 3.5V @ 1.2mA 9.5nC @ 15V 150pF @ 600V +18V, -8V C3M™
C3M0065090J-TR MOSFET N-CH 900V 35A D2PAK-7 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113W (Tc) 900V 35A (Tc) 78mOhm @ 20A, 15V 15V 2.1V @ 5mA 30nC @ 15V 660pF @ 600V +19V, -8V C3M™
C3M0065090J MOSFET N-CH 900V 35A D2PAK-7 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113W (Tc) 900V 35A (Tc) 78mOhm @ 20A, 15V 15V 2.1V @ 5mA 30nC @ 15V 660pF @ 600V +19V, -8V C3M™
C3M0120090J MOSFET N-CH 900V 22A Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 83W (Tc) 900V 22A (Tc) 155mOhm @ 15A, 15V 15V 3.5V @ 3mA 17.3nC @ 15V 350pF @ 600V +18V, -8V C3M™
C3M0075120J MOSFET N-CH 1200V 30A D2PAK-7 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113.6W (Tc) 1200V 30A (Tc) 90mOhm @ 20A, 15V 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V +19V, -8V C3M™
C3M0120090J-TR MOSFET N-CH 900V 22A Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 83W (Tc) 900V 22A (Tc) 155mOhm @ 15A, 15V 15V 3.5V @ 3mA 17.3nC @ 15V 350pF @ 600V +18V, -8V C3M™
C3M0120100J MOSFET N-CH 1000V 22A D2PAK-7 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 83W (Tc) 1000V 22A (Tc) 155mOhm @ 15A, 15V 15V 3.5V @ 3mA 21.5nC @ 15V 350pF @ 600V +15V, -4V C3M™
C3M0280090J MOSFET N-CH 900V 11A Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 50W (Tc) 900V 11A (Tc) 360mOhm @ 7.5A, 15V 15V 3.5V @ 1.2mA 9.5nC @ 15V 150pF @ 600V +18V, -8V C3M™
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  • 50
  • 100