- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C2M0045170P | ZFET SIC DMOSFET, 1700V VDS, RDS | Cree/Wolfspeed | TO-247-4 | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | -40°C ~ 150°C (TJ) | N-Channel | 520W (Tc) | 1700V | 72A (Tc) | 59mOhm @ 50A, 20V | 20V | 4V @ 18mA | 188nC @ 20V | 3672pF @ 1000V | +25V, -10V | C2M™ | |||||||||||
| C2M0080120D | MOSFET N-CH 1200V 31.6A TO247 | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 192W (Tc) | 1200V | 36A (Tc) | 98mOhm @ 20A, 20V | 20V | 4V @ 5mA | 62nC @ 5V | 950pF @ 1000V | +25V, -10V | C2M™ | |||||||||||
| C2M1000170J-TR | MOSFET N-CH 1700V 5.3A TO247 | Cree/Wolfspeed | D2PAK-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 78W (Tc) | 1700V | 5.3A (Tc) | 1.4Ohm @ 2A, 20V | 20V | 3.1V @ 500µA (Typ) | 13nC @ 20V | 200pF @ 1000V | +25V, -10V | C2M™ | |||||||||||
| C2M0280120D | MOSFET N-CH 1200V 10A TO-247-3 | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 62.5W (Tc) | 1200V | 10A (Tc) | 370mOhm @ 6A, 20V | 20V | 2.8V @ 1.25mA (Typ) | 20.4nC @ 20V | 259pF @ 1000V | +25V, -10V | Z-FET™ | |||||||||||
| C3M0120090D | 900V, 120 MOHM, G3 SIC MOSFET | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 97W (Tc) | 900V | 23A (Tc) | 155mOhm @ 15A, 15V | 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | +18V, -8V | C3M™ | |||||||||||
| C3M0030090K | ZFET 900V, 30 MOHM, G3 SIC MOSFE | Cree/Wolfspeed | TO-247-4 | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 149W (Tc) | 900V | 63A (Tc) | 39mOhm @ 35A, 15V | 15V | 3.5V @ 11mA | 87nC @ 15V | 1864pF @ 600V | +15V, -4V | C3M™ | |||||||||||
| C2M0080170P | ZFET SIC DMOSFET, 1700V VDS, RDS | Cree/Wolfspeed | TO-247-4 | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 277W (Tc) | 1700V | 40A (Tc) | 125mOhm @ 28A, 20V | 20V | 4V @ 10mA | 120nC @ 20V | 2250pF @ 1000V | +25V, -10V | C2M™ | |||||||||||
| C3M0075120K | MOSFET N-CH 1200V 30A TO247-4 | Cree/Wolfspeed | TO-247-4L | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 113.6W (Tc) | 1200V | 30A (Tc) | 90mOhm @ 20A, 15V | 15V | 4V @ 5mA | 51nC @ 15V | 1350pF @ 1000V | +19V, -8V | C3M™ | |||||||||||
| CAB400M12XM3 | MOSFET 2 N-CH 1200V MODULE | Cree/Wolfspeed | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 1200V | 395A (Tc) | Silicon Carbide (SiC) | 5.3mOhm @ 400A, 15V | 3.6V @ 92mA | 908nC @ 15V | 2450pF @ 800V | ||||||||||||||||
| CAB450M12XM3 | 1.2KV 450A SIC HALF BRIDGE MOD | Cree/Wolfspeed | Module | 850W | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N-Channel (Half Bridge) | 1200V | 450A | Silicon Carbide (SiC) | 3.7mOhm @ 450A, 15V | 3.6V @ 132mA | 1330nC @ 15V | 38000pF @ 800V | ||||||||||||||
| C3M0032120K | MOSFET N-CH SIC 1200V 100A | Cree/Wolfspeed | TO-247-4L | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | -40°C ~ 175°C (TJ) | N-Channel | 283W (Tc) | 1200V | 63A (Tc) | 43mOhm @ 40A, 15V | 15V | 3.6V @ 11.5mA | 118nC @ 15V | 3357pF @ 1000V | +15V, -4V | C3M™ | |||||||||||
| E3M0120090D | E-SERIES 900V, 120 MOHM, G3 SIC | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 97W (Tc) | 900V | 23A (Tc) | 155mOhm @ 15A, 15V | 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | +18V, -8V | Automotive, AEC-Q101, E | |||||||||||
| CPMF-1200-S160B | MOSFET N-CHANNEL 1200V 28A DIE | Cree/Wolfspeed | Die | Surface Mount | Die | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 202W (Tj) | 1200V | 28A (Tj) | 220mOhm @ 10A, 20V | 20V | 4V @ 1mA | 47.1nC @ 20V | 928pF @ 800V | +25V, -5V | Z-FET™ | |||||||||||
| CPMF-1200-S080B | MOSFET N-CHANNEL 1200V 50A DIE | Cree/Wolfspeed | Die | Surface Mount | Die | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 313mW (Tj) | 1200V | 50A (Tj) | 110mOhm @ 20A, 20V | 20V | 4V @ 1mA | 90.8nC @ 20V | 1915pF @ 800V | +25V, -5V | Z-FET™ | |||||||||||
| C3M0075120J-TR | 1200V, 75 MOHM, G3 SIC MOSFET ON | Cree/Wolfspeed | TO-263-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 113.6W (Tc) | 1200V | 30A (Tc) | 90mOhm @ 20A, 15V | 15V | 4V @ 5mA | 51nC @ 15V | 1350pF @ 1000V | +15V, -4V | C3M™ |
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