• Manufacturer: Cree/Wolfspeed
• Package / Case: H-37248-4
• Supplier Device Package: H-37248-4
• Frequency: 2.69GHz
• Voltage - Rated: 65V
• Current - Test: 85mA
• Power - Output: 5W
• Transistor Type: LDMOS
• Gain: 15.7dB
• Voltage - Test: 28V

• Manufacturer: Cree/Wolfspeed
• Series: GaN
• Package / Case: H-87265J-2
• Supplier Device Package: H-87265J-2
• Frequency: 2.11GHz ~ 2.2GHz
• Voltage - Rated: 125V
• Current - Test: 320mA
• Power - Output: 270W
• Transistor Type: HEMT
• Gain: 19dB
• Voltage - Test: 48V

• Manufacturer: Cree/Wolfspeed
• Series: Automotive, AEC-Q101, E
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Rds On (Max) @ Id, Vgs: 84.5mOhm @ 20A, 15V
• Vgs(th) (Max) @ Id: 3.5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 125W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs (Max): +18V, -8V

• Manufacturer: Cree/Wolfspeed
• Series: C3M™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
• Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 54W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs (Max): +18V, -8V

• Manufacturer: Cree/Wolfspeed
• Series: Z-FET™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1700V
• Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
• Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 191pF @ 1000V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 69W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs (Max): +25V, -10V

• Manufacturer: Cree/Wolfspeed
• Series: Z-Rec®
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: Module
• Supplier Device Package: Module
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
• Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
• Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
• Power - Max: 1760W

• Manufacturer: Cree/Wolfspeed

• Manufacturer: Cree/Wolfspeed
• Package / Case: H-33288-6
• Supplier Device Package: H-33288-6
• Frequency: 1.99GHz
• Voltage - Rated: 65V
• Current - Test: 1.9A
• Power - Output: 50W
• Transistor Type: LDMOS
• Gain: 19dB
• Voltage - Test: 30V

• Manufacturer: Cree/Wolfspeed

• Manufacturer: Cree/Wolfspeed
• Series: GaN
• Package / Case: H-37248C-4
• Supplier Device Package: H-37248C-4
• Frequency: 3.4GHz ~ 3.6GHz
• Voltage - Rated: 125V
• Current - Test: 200mA
• Power - Output: 280W
• Transistor Type: HEMT
• Gain: 13.5dB
• Voltage - Test: 48V

• Manufacturer: Cree/Wolfspeed
• Package / Case: H-37248-4
• Supplier Device Package: H-37248-4
• Frequency: 2.69GHz
• Voltage - Rated: 65V
• Current - Test: 170mA
• Power - Output: 5W
• Transistor Type: LDMOS (Dual)
• Gain: 20dB
• Voltage - Test: 28V

• Manufacturer: Cree/Wolfspeed
• Series: Z-FET™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 800V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 125W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs (Max): +25V, -10V

• Manufacturer: Cree/Wolfspeed
• Series: GaN
• Package / Case: H-37248C-4
• Supplier Device Package: H-37248C-4
• Frequency: 3.4GHz ~ 3.6GHz
• Voltage - Rated: 125V
• Current - Test: 140mA
• Power - Output: 200W
• Transistor Type: HEMT
• Gain: 13.5dB
• Voltage - Test: 48V

• Manufacturer: Cree/Wolfspeed

• Manufacturer: Cree/Wolfspeed
• Series: C3M™
• Mounting Type: Through Hole
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
• Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
• Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
• Gate Charge (Qg) (Max) @ Vgs: 114nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 3357pF @ 1000V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 283W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs (Max): +15V, -4V