- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
-
- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440117
- Supplier Device Package: 440117
- Frequency: 1.2GHz ~ 1.4GHz
- Voltage - Rated: 125V
- Current - Test: 500mA
- Power - Output: 500W
- Transistor Type: HEMT
- Gain: 17dB
- Voltage - Test: 50V
- Current Rating (Amps): 36A
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- Manufacturer: Cree/Wolfspeed
- Series: C3M™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 97W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): +18V, -8V
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- Manufacturer: Cree/Wolfspeed
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- Manufacturer: Cree/Wolfspeed
- Series: C3M™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V
- Vgs(th) (Max) @ Id: 3.5V @ 11mA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1864pF @ 600V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 149W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): +15V, -4V
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-
- Manufacturer: Cree/Wolfspeed
- Package / Case: H-36248-2
- Supplier Device Package: H-36248-2
- Frequency: 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 1.2A
- Power - Output: 40W
- Transistor Type: LDMOS
- Gain: 18dB
- Voltage - Test: 30V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-36260-2
- Frequency: 2.11GHz ~ 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 1.2A
- Power - Output: 180W
- Transistor Type: LDMOS
- Gain: 15.5dB
- Voltage - Test: 28V
- Current Rating (Amps): 10µA
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
- Frequency: 2.4GHz
- Voltage - Rated: 65V
- Current - Test: 360mA
- Power - Output: 28W
- Transistor Type: LDMOS
- Gain: 16.5dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-36265-2
- Supplier Device Package: H-36265-2
- Frequency: 500MHz ~ 1.4GHz
- Voltage - Rated: 105V
- Power - Output: 34W
- Transistor Type: LDMOS
- Gain: 15.8dB
- Current Rating (Amps): 10µA
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37275G-6/2
- Supplier Device Package: H-37275G-6/2
- Frequency: 1.805GHz ~ 1.88GHz
- Voltage - Rated: 65V
- Current - Test: 720mA
- Power - Output: 130W
- Transistor Type: LDMOS
- Gain: 14dB
- Voltage - Test: 28V
- Current Rating (Amps): 10µA
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440217
- Supplier Device Package: 440217
- Frequency: 5.2GHz ~ 5.9GHz
- Voltage - Rated: 125V
- Current - Test: 1A
- Power - Output: 450W
- Transistor Type: HEMT
- Gain: 11.2dB
- Voltage - Test: 50V
- Current Rating (Amps): 24A
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- Manufacturer: Cree/Wolfspeed
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-34288-4/2
- Frequency: 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 1.2A
- Power - Output: 32W
- Transistor Type: LDMOS
- Gain: 18dB
- Voltage - Test: 30V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37275-6/2
- Supplier Device Package: H-37275-6/2
- Frequency: 1.99GHz
- Voltage - Rated: 65V
- Current - Test: 2.6A
- Power - Output: 80W
- Transistor Type: LDMOS
- Gain: 19dB
- Voltage - Test: 30V
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- Manufacturer: Cree/Wolfspeed
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- Manufacturer: Cree/Wolfspeed
- Series: C2M™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1700V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 28A, 20V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 277W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs (Max): +25V, -10V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-34288-4/2
- Frequency: 1.99GHz
- Voltage - Rated: 65V
- Current - Test: 1.9A
- Power - Output: 50W
- Transistor Type: LDMOS
- Gain: 19dB
- Voltage - Test: 30V
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- Offers in stock:
- 10
- 15
- 50
- 100