- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C3M0021120K | 1200V, 21 MOHM, G3 SIC MOSFET | Cree/Wolfspeed | TO-247-4L | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | -40°C ~ 175°C (TJ) | N-Channel | 469W (Tc) | 1200V | 100A (Tc) | 28.8mOhm @ 50A, 15V | 15V | 3.6V @ 17.7mA | 162nC @ 15V | 4818pF @ 1000V | +15V, -4V | C3M™ | |||||||||||
| CAS325M12HM2 | MOSFET 2N-CH 1200V 444A MODULE | Cree/Wolfspeed | Module | 3000W | Module | 175°C (TJ) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 444A (Tc) | Silicon Carbide (SiC) | 4.3mOhm @ 400A, 20V | 4V @ 105mA | 1127nC @ 20V | Z-Rec® | |||||||||||||||
| C3M0120100K | MOSFET N-CH 1000V 22A TO247-4L | Cree/Wolfspeed | TO-247-4L | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 83W (Tc) | 1000V | 22A (Tc) | 155mOhm @ 15A, 15V | 15V | 3.5V @ 3mA | 21.5nC @ 15V | 350pF @ 600V | ±15V | C3M™ | |||||||||||
| C3M0065100J | MOSFET N-CH 1000V 35A D2PAK-7 | Cree/Wolfspeed | D2PAK-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 113.5W (Tc) | 1000V | 35A (Tc) | 78mOhm @ 20A, 15V | 15V | 3.5V @ 5mA | 35nC @ 15V | 660pF @ 600V | +15V, -4V | C3M™ | |||||||||||
| C3M0021120D | 1200V, 21 MOHM, G3 SIC MOSFET | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -40°C ~ 175°C (TJ) | N-Channel | 469W (Tc) | 1200V | 100A (Tc) | 28.8mOhm @ 50A, 15V | 15V | 3.6V @ 17.7mA | 160nC @ 15V | 4818pF @ 1000V | +15V, -4V | C3M™ | |||||||||||
| C3M0280090J-TR | MOSFET N-CH 900V 11A | Cree/Wolfspeed | D2PAK-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 50W (Tc) | 900V | 11A (Tc) | 360mOhm @ 7.5A, 15V | 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | +18V, -8V | C3M™ | |||||||||||
| CAS300M12BM2 | MOSFET 2N-CH 1200V 404A MODULE | Cree/Wolfspeed | Module | 1660W | Chassis Mount | Module, Screw Terminals | 150°C (TJ) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 423A (Tc) | Silicon Carbide (SiC) | 5.7mOhm @ 300A, 20V | 2.3V @ 15mA (Typ) | 1025nC @ 20V | 11700pF @ 600V | Z-FET™ | |||||||||||||
| CCS020M12CM2 | MOSFET 6N-CH 1200V 29.5A MODULE | Cree/Wolfspeed | Module | 167W | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 29.5A (Tc) | Silicon Carbide (SiC) | 98mOhm @ 20A, 20V | 2.2V @ 1mA (Typ) | 61.5nC @ 20V | 900pF @ 800V | Z-Rec® | |||||||||||||
| C3M0075120D | MOSFET 1200V, 75 MOHM, G3 SIC | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 113.6W (Tc) | 1200V | 30A (Tc) | 90mOhm @ 20A, 15V | 15V | 4V @ 5mA | 54nC @ 15V | 1350pF @ 1000V | +19V, -8V | C3M™ | |||||||||||
| E3M0280090D | E-SERIES 900V, 280 MOHM, G3 SIC | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 54W (Tc) | 900V | 11.5A (Tc) | 360mOhm @ 7.5A, 15V | 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | +18V, -8V | Automotive, AEC-Q101, E | |||||||||||
| C3M0065090J-TR | MOSFET N-CH 900V 35A D2PAK-7 | Cree/Wolfspeed | D2PAK-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 113W (Tc) | 900V | 35A (Tc) | 78mOhm @ 20A, 15V | 15V | 2.1V @ 5mA | 30nC @ 15V | 660pF @ 600V | +19V, -8V | C3M™ | |||||||||||
| E3M0065090D | E-SERIES 900V, 65 MOHM, G3 SIC M | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 125W (Tc) | 900V | 35A (Tc) | 84.5mOhm @ 20A, 15V | 15V | 3.5V @ 5mA | 30.4nC @ 15V | 660pF @ 600V | +18V, -8V | Automotive, AEC-Q101, E | |||||||||||
| C3M0280090D | MOSFET N-CH 900V 11.5A | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 54W (Tc) | 900V | 11.5A (Tc) | 360mOhm @ 7.5A, 15V | 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | +18V, -8V | C3M™ | |||||||||||
| C2M1000170D | MOSFET N-CH 1700V 4.9A TO247 | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 69W (Tc) | 1700V | 4.9A (Tc) | 1.1Ohm @ 2A, 20V | 20V | 2.4V @ 100µA | 13nC @ 20V | 191pF @ 1000V | +25V, -10V | Z-FET™ | |||||||||||
| CAS300M17BM2 | MOSFET 2N-CH 1700V 325A MODULE | Cree/Wolfspeed | Module | 1760W | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 1700V (1.7kV) | 325A (Tc) | Silicon Carbide (SiC) | 10mOhm @ 225A, 20V | 2.3V @ 15mA (Typ) | 1076nC @ 20V | 20000pF @ 1000V | Z-Rec® |
- 10
- 15
- 50
- 100